A new implemenation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor’s nonlinear parameters

Abstract

This work reports on a new implementation of a transistor model aiming for closer understanding of the nonlinear elements in silicon CMOS transistors operating at high frequencies. Using this model, the contribution of each source of distortion can be individually quantified using a superposition method. The new model is implemented entirely using symbolically defined devices (SDD) for each nonlinear parameter individually. The transistor used is a foundry 180nm RF CMOS transistor capable of operating up to 10GHz. The SDD model is validated by examining the nonlinear behavior of the model against the behavior of the modeled transistor in a one tone sweep test from very small powers up to beyond compression. This work was carried out using Agilent design systems tool (ADS).