Gudkov Aleksandr, V. Shashurin, V. Vyuginov, V. Tikhomirov, S. Vidyakin, S. Agasieva, S. Chizhikov
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引用次数: 5
Abstract
Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation.
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