Reliability of flip chip packages with high thermal conductivity heat spreader attach

Yuquan Li, R.W. Johnson, P. Thompson, T. Hooghan, J. Libres
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引用次数: 7

Abstract

Copper heat spreaders are often used in flip chip in package construction. While providing high thermal conductivity, Cu has a significantly higher coefficient of thermal expansion than Si. In this work, two heat spreader attachment materials, indium for high power and polymeric adhesive for medium power applications, have been investigated. For In solder based attach, the Cu heat spreader was metallized with Ni/Au. Two thin film metallizations, Ti/Ni/Au and Ti/Au, have been studied for the Si backside. A nearly void free heat spreader attach has been achieved with vacuum soldering. For Ti/Ni/Au backside metallized Si die, there was no significant shear strength change after 1000 hours aging at 120degC and there was no significant shear or pull strength variation after five lead free re flow cycles. The shear and pull failure mode was within the indium layer. For Ti/Au die backside metallization, the initial die pull strength and failure mode were a function of Au thickness. With 3000 A of Au, there is no significant variation for shear and pull strength after 600 hours aging at 120degC or after five lead free solder reflow cycles. Failure was in the indium layer. For both types of die metallization, 24 mm times 24 mm Cu heat spreaders assembled on 22 mm times 22 mm Si die, exhibited no delamination after two lead free solder reflow cycles followed by 500 air to air thermal shock cycles (-40degC to 85degC). At 1000 cycles, slight delamination was found at the edges of the assembly for both die metallurgies. For adhesive based flat heat spreader attachment, a thermally conductive adhesive was used as the thermal interface and a non-thermally conductive adhesive was applied at the substrate corners to provide mechanical reinforcement of the heat spreader. After pre-conditioning then aging at 100degC for 500 hours followed by 500 air-to-air thermal shock cycles (0degC to 100degC), no delamination was observed and there was no significant degradation in pull strength.
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高导热散热器贴装倒装芯片封装的可靠性
铜散热器常用于倒装芯片的封装结构中。在提供高导热系数的同时,Cu的热膨胀系数明显高于Si。本文主要研究了两种导热材料:用于大功率应用的铟和用于中功率应用的聚合物胶粘剂。对于In焊料,用Ni/Au对Cu散热器进行金属化处理。研究了Si背面的两种金属化薄膜,Ti/Ni/Au和Ti/Au。通过真空焊接实现了几乎无空隙的散热片连接。对于Ti/Ni/Au背面金属化Si模,在120℃时效1000小时后,剪切强度无明显变化,在5次无铅再流循环后,剪切强度和拉拔强度无明显变化。剪拉破坏模式主要发生在铟层内部。对于Ti/Au模背面金属化,初始模拉强度和失效模式是Au厚度的函数。当Au为3000 A时,在120℃下时效600小时或经过5次无铅焊料回流循环后,剪切和拉强度没有明显变化。失败是在铟层。对于两种类型的模具金属化,24mm × 24mm的Cu散热器组装在22mm × 22mm的Si模具上,经过两次无铅焊料回流循环和500次空气对空气热冲击循环(-40摄氏度到85摄氏度)后,没有出现分层。在1000次循环中,在两种模具冶金的装配边缘发现了轻微的分层。对于基于胶粘剂的平板式散热器附件,采用导热胶粘剂作为热界面,在基材角落处应用非导热胶粘剂对散热器进行机械加固。经过预处理,然后在100℃下老化500小时,然后进行500次空对空热冲击循环(0℃至100℃),没有观察到分层现象,拉强度也没有明显下降。
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