F. Pasadas, A. Pacheco-Sánchez, N. Mavredakis, D. Jiménez
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引用次数: 0
Abstract
We present a physics-based compact model of graphene field-effect transistors (GFETs) able to be run under the freeware Quite Universal Circuit Simulator (QUCS), bringing the possibility to any user to undertake circuit simulations based on the emergent graphene technology. The model is based on the drift-diffusion mechanism for the carrier transport coupled with the solution of the electrostatics of the device structure. Simulations on QUCS of an exemplary application consisting of a GFET-based gas sensor are shown, bringing to light the potential of the technology computer-aided design (TCAD) tool developed for novel concepts of applications based on the inherent features of graphene and related materials.
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