Degradation Study of 830nm Laser Diodes Based on PSpice Model and Accelerated Tests

Abstract

The signatures and trend of degradation of 830 nm coaxial double heterojunction laser diode (DHLD) are studied by PSpice model simulation and accelerated degradation test. The relationships among temperature rise, degradation modes and signatures are revealed. Firstly, the mechanism of active region defect growth (ARDG) and cavity surface oxidation (CSO) are analyzed, and the causal relationship between temperature rise and CSO is revealed. Then, an equivalent circuit model of LD is constructed by PSpice software, and the simulation results show that the ARDG will cause the threshold current of P(I) curve to increase and the CSO will cause the slope to decrease. Finally, an accelerated degradation experimental platform is constructed, and the accelerated degradation tests are carried out on Sharp's 830 nm LD. The experimental results show that the temperature rise will cause the deterioration of CSO, but has no significant effect on ARDG.