Robust, wide range hydrogen sensor

J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter
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引用次数: 14

Abstract

A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<>
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坚固,宽范围氢气传感器
一种新的强大,宽范围的氢传感器技术将催化栅极晶体管和电阻与基准CMOS工艺集成在一起。Pd或PdNi栅极晶体管检测低浓度的氢(ppm)和Pd或PdNi薄膜电阻器检测高浓度的氢(高达100%)。在同一模具上制造这两个传感器允许在6个数量级的动态范围内检测氢。片上功率晶体管加热器和二极管温度计允许精确的芯片温度控制。
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