T. Nakahara, H. Tsuda, K. Tateno, N. Ishihara, C. Amano
{"title":"High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding","authors":"T. Nakahara, H. Tsuda, K. Tateno, N. Ishihara, C. Amano","doi":"10.1109/LEOSST.2000.869680","DOIUrl":null,"url":null,"abstract":"We have developed a wafer-bonded hybrid receiver using 0.5-/spl mu/m CMOS that operates with a single 3.3-V supply voltage. The receiver circuit is small and simple, has high sensitivity and a broad bandwidth, and operates at either 0.85 or 1.55 /spl mu/m due to the direct attachment of the III-V photodiode without parasitic capacitance.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.2000.869680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We have developed a wafer-bonded hybrid receiver using 0.5-/spl mu/m CMOS that operates with a single 3.3-V supply voltage. The receiver circuit is small and simple, has high sensitivity and a broad bandwidth, and operates at either 0.85 or 1.55 /spl mu/m due to the direct attachment of the III-V photodiode without parasitic capacitance.
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