Zhang Zheng-fan, L. Zhaoji, Tan Kai-zhou, Zhang Jiabin
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引用次数: 3
Abstract
In this paper, an analytical model of sub-threshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion's equation and depletion approximation, and the relation of the sub-threshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with sub-threshold swing is proposed.
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