A. Loffler, J. Reithmaier, G. Sȩk, C. Hofmann, S. Reitienstein, M. Kamp, A. Forchel
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引用次数: 0
Abstract
Vertical emitting AlAs/GaAs microcavity pillars with a new type of GaInAs quantum dots within a one /spl lambda/-cavity have been realised based on high reflectivity distributed Bragg reflectors. High quality factors were achieved due to an improved fabrication technology. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga/sub 0.70/In/sub 0.30/As nucleation layer. In this paper, micropillars with a maximum quality factor of up to 27700 for a 4 /spl mu/m wide microcavity was presented.
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