Susceptibility of microcontrollers to ultra-short pulse electromagnetic interferences under the temperature influence

2022 International Siberian Conference on Control and Communications (SIBCON) Pub Date : 2022-11-17 DOI:10.1109/SIBCON56144.2022.10002886

Valeriy A. Semenyuk, A. Osintsev, M. Komnatnov

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Abstract

This paper presents the results of investigations of susceptibility of microcontrollers ($\mu$C) and flash memory to combined temperature and electromagnetic influence. The influence of electromagnetic interference was studied in a TEM cell placed inside a heat-cold chamber, in the temperature range from minus 50 to 105°C. The method of testing the $\mu$C included 5 stages; 60 test runs were performed without temperature influence, and 120- with it. In addition, the main requirements to the $\mu$C test program were formulated, and the methodology for detecting failures was developed. The failures in the $\mu$C are detected by analyzing and comparing the memory dump before and after the excitation of external electromagnetic interference in the form of an ultra-short pulse. It is shown that such excitation leads to software failures and data changes in the flash memory, while the combined temperature and electromagnetic influence leads to software failures without data changes in the flash memory.

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温度影响下微控制器对超短脉冲电磁干扰的敏感性

本文介绍了微控制器($\mu$C)和闪存对温度和电磁综合影响的敏感性研究结果。在温度范围为- 50°C至105°C的冷热室中，研究了电磁干扰对TEM细胞的影响。$\mu$C的测试方法包括5个阶段;在没有温度影响的情况下进行了60次试验，在有温度影响的情况下进行了120次试验。此外，还制定了$\mu$C测试程序的主要要求，并制定了故障检测方法。通过分析比较外部超短脉冲电磁干扰激励前后的内存转储，检测出$\mu$C的故障。结果表明，这种激励导致闪存软件失效，数据发生变化，而温度和电磁综合影响导致闪存软件失效，数据不发生变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 International Siberian Conference on Control and Communications (SIBCON)

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