I. Sukhoivanov, O. Mashoshyna, V. Kononenko, Dmitrii Ushakov
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引用次数: 4
Abstract
In this work, the temperature dependence of the lasing threshold in the GalnAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (5 and 9 nm) has been determined. The AR rate increases practically exponentially in the temperature interval 250 to 350 K. Including into consideration the processes of nonradiative AR allows to take account of the nonequilibrium processes which occur in the active region of the quantum-well lasers more completely and accurately.
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