Fabrication of nanoscale features on ultra-thin glass-based dielectrics via self-masking and preferential etching to enhance capacitance

Amoghavarsha Mahadevegowda, C. Johnston, P. Grant
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Abstract

Flexible capacitors based on ultra-thin glass (30 μm thick) were fabricated and the effect of nanoscale surface modification on the dielectric properties was studied. The ultra-thin glass samples were partially masked by the deposition and self-organisation of Ag-islands and then preferentially etched to produce a controlled topography. The etching duration was varied and its effect on Ag content and dielectric properties were studied by employing atomic force microscopy (AFM), scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM-EDS), and impedance spectroscopy. The AFM studies revealed the presence of nanoscale ‘peaks’, which were distributed across the surface of the glass, that following etching showed enhanced capacitance. Surface modification of glass using self-organised nano-scale metal island masks is shown to be an effective route to enhance the use of ultra-thin glass in capacitor applications.
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利用自掩膜和优先蚀刻技术在超薄玻璃基介电体上制备纳米级特征以增强电容
制备了30 μm厚超薄玻璃柔性电容器,研究了纳米级表面改性对其介电性能的影响。超薄玻璃样品被ag岛的沉积和自组织部分掩盖,然后优先蚀刻以产生受控的地形。采用原子力显微镜(AFM)、扫描电镜、能量色散x射线能谱(SEM-EDS)和阻抗谱研究了不同刻蚀时间对银含量和介电性能的影响。AFM研究揭示了纳米级“峰”的存在,这些峰分布在玻璃表面,蚀刻后显示出增强的电容。利用自组织纳米级金属岛掩膜对玻璃进行表面改性是提高超薄玻璃在电容器应用中的应用的有效途径。
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