Dual-gate charge sensing in charge-coupled devices

G. S. Hobson, R. Longstone, R. C. Tozer
{"title":"Dual-gate charge sensing in charge-coupled devices","authors":"G. S. Hobson, R. Longstone, R. C. Tozer","doi":"10.1049/IJ-SSED:19780058","DOIUrl":null,"url":null,"abstract":"A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
电荷耦合器件中的双栅电荷传感
介绍了一种在抽头电荷耦合器件中进行电荷线性传感的新技术。它使用两个门。一个是由电压源偏置的,一个是浮动的,但两者都是由表面电位平衡耦合的。实验和理论表明,该技术比浮栅传感具有更好的线性度和动态范围。它具有与浮门结构一样易于外围电路实现的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers Phase and group indices for double heterostructure lasers Growth and characteristics of GaInAsp/Inp double heterostructure lasers Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements Simplified theory for mode locking in injection lasers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1