S. Bang, Sang Jin Lee, Mun-Kyo Lee, D. Ko, S. Moon, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Byoung-Chul Jun, Dong-Chul Park, Sam-Dong Kim, J. Rhee
{"title":"Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications","authors":"S. Bang, Sang Jin Lee, Mun-Kyo Lee, D. Ko, S. Moon, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Byoung-Chul Jun, Dong-Chul Park, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534555","DOIUrl":null,"url":null,"abstract":"In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
