R. Carvalho, M. Schaeffer, V. Magri, T. Ferreira, Leni J. Matos
{"title":"Caracterização de protótipos de filtros seletivos em frequência na faixa do LTE","authors":"R. Carvalho, M. Schaeffer, V. Magri, T. Ferreira, Leni J. Matos","doi":"10.14209/sbrt.2019.1570556783","DOIUrl":null,"url":null,"abstract":"This paper aims at the design and the development of two frequency selective bandpass filters that consist of coupled microstrip lines, in the parallel edge coupled line and hairpin configurations, for the frequency band between 2620 and 2690 MHz, used for LTE systems. The devices were developed according to the prototyping techniques on the FR-4 substrate, presenting a bandwidth equal to 223 MHz and 95 MHz, respectively. An excellent agreement between the expected and measured results is reached, indicating great potential for the proposed applicationis paper presents the development and manufacturing of an amplifier circuit, operating in the 0 to 4 GHz range. Simulations were performed to verify its operation. After the results were obtained, the circuit was printed on an FR-4 circuit board, using microstrip transmission lines.","PeriodicalId":135552,"journal":{"name":"Anais de XXXVII Simpósio Brasileiro de Telecomunicações e Processamento de Sinais","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Anais de XXXVII Simpósio Brasileiro de Telecomunicações e Processamento de Sinais","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14209/sbrt.2019.1570556783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper aims at the design and the development of two frequency selective bandpass filters that consist of coupled microstrip lines, in the parallel edge coupled line and hairpin configurations, for the frequency band between 2620 and 2690 MHz, used for LTE systems. The devices were developed according to the prototyping techniques on the FR-4 substrate, presenting a bandwidth equal to 223 MHz and 95 MHz, respectively. An excellent agreement between the expected and measured results is reached, indicating great potential for the proposed applicationis paper presents the development and manufacturing of an amplifier circuit, operating in the 0 to 4 GHz range. Simulations were performed to verify its operation. After the results were obtained, the circuit was printed on an FR-4 circuit board, using microstrip transmission lines.