High power-handling GaN switch for S-band applications

G. Polli, M. Palomba, S. Colangeli, M. Vittori, E. Limiti
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引用次数: 3

Abstract

An asymmetrical switch architecture suitable for TRMs is proposed in this contribution. The design procedure and a test circuit are provided. The switch exhibits a 48.8 dBm input power-handling at a 0.1 dB power compression level and features an insertion loss less than 0.6 dB both in Rx- and Tx-mode.
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用于s波段应用的高功率处理GaN开关
本文提出了一种适用于trm的非对称开关结构。给出了设计步骤和测试电路。该开关在0.1 dB功率压缩水平下具有48.8 dBm的输入功率处理,并且在Rx和tx模式下的插入损耗均小于0.6 dB。
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