S. Hong, B. Koo, T. Jeon, S. Hyun, Y. Shin, U. Chung, J. Moon
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Abstract
The plasma nitrided gate oxide process has been developed and applied for mobile DRAM with low operating voltage. As a result, we confirm that plasma nitrided gate oxide can block the boron penetration in DRAM, which has a higher thermal budget than other devices. The nitrogen bonding status and profile are investigated to check the change in transistor and gate oxide characteristics.
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