High-temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures

Abstract

This paper presents a statistical analysis on the effect of parallel connection of SiC power MOSFETs in high current applications. To this purpose, a reliable temperature-dependent SPICE model is calibrated on static and dynamic experimental curves of 1.2kV-36A commercial SiC MOSFET. The statistical fluctuation of threshold voltage and on-resistance is evaluated on 20 device samples and modeled with Gaussian functions. The proposed analysis, based on SPICE electrothermal Monte Carlo simulations, is then aimed to improve the design of high current systems with multi-chip devices. Therefore, the study is focused on the evaluation of current and energy unbalance during device switching under inductive load. Results achieved for nominal switching condition and out-of-SOA current levels are discussed.