Compact SOI-based AWG with flattened spectral response using a MMI

S. Pathak, E. Lambert, P. Dumon, D. van Thourhout, W. Bogaerts
{"title":"Compact SOI-based AWG with flattened spectral response using a MMI","authors":"S. Pathak, E. Lambert, P. Dumon, D. van Thourhout, W. Bogaerts","doi":"10.1109/GROUP4.2011.6053710","DOIUrl":null,"url":null,"abstract":"We demonstrated an ultra small 12 channels 400GHz AWG on SOI with flattened spectral response using a MMI mode shaper. Insertion loss and crosstalk are −3.29db and 17.0db, respectively. The device size is only 560×350µm<sup>2</sup>.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

We demonstrated an ultra small 12 channels 400GHz AWG on SOI with flattened spectral response using a MMI mode shaper. Insertion loss and crosstalk are −3.29db and 17.0db, respectively. The device size is only 560×350µm2.
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紧凑的基于soi的AWG与平坦的光谱响应使用MMI
我们在SOI上展示了一个超小型的12通道400GHz AWG,使用MMI模式成形器实现了平坦的频谱响应。插入损耗和串扰分别为−3.29db和17.0db。设备尺寸仅为560×350µm2。
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