T. Gessert, P. Sheldon, Xiaonan Li, D. Dunlavy, D. Niles, R. Sasala, S. Albright, B. Zadler
{"title":"Studies of ZnTe back contacts to CdS/CdTe solar cells","authors":"T. Gessert, P. Sheldon, Xiaonan Li, D. Dunlavy, D. Niles, R. Sasala, S. Albright, B. Zadler","doi":"10.1109/PVSC.1997.654117","DOIUrl":null,"url":null,"abstract":"Ongoing research topics in CdS/CdTe photovoltaic (PV) device technology include development of a back contact demonstrating low resistance and stability, while using processes consistent with large-area manufacturing. In efforts toward this goal, the authors have a sequence of dry, high-temperature processes to provide this contact. The process eliminates the need for chemical etching, and is performed at /spl sim/300/spl deg/C to aid in contact stability and adhesion. Applying this contact process to NREL-grown CdS/CdTe device material has resulted in efficiencies >12%. Devices with efficiencies /spl sim/10% have also been produced using material supplied by Solar Cells, Inc., and by Golden Photon, Inc.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
Ongoing research topics in CdS/CdTe photovoltaic (PV) device technology include development of a back contact demonstrating low resistance and stability, while using processes consistent with large-area manufacturing. In efforts toward this goal, the authors have a sequence of dry, high-temperature processes to provide this contact. The process eliminates the need for chemical etching, and is performed at /spl sim/300/spl deg/C to aid in contact stability and adhesion. Applying this contact process to NREL-grown CdS/CdTe device material has resulted in efficiencies >12%. Devices with efficiencies /spl sim/10% have also been produced using material supplied by Solar Cells, Inc., and by Golden Photon, Inc.
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