A high-isolation 60GHz CMOS transmit/receive switch

Abstract

This paper presents a 60GHz high-isolation CMOS single-pole double-throw (SPDT) transmitter/receiver (T/R) switch fabricated with TSMC standard 90-nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved by using the body-floating technique. The leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The top metal (M9) is mainly adopted for designing signal paths and the microstrip-line matching elements. In order to minimize the substrate loss, the first metal (M1) as the ground plane is used in this design. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64GHz. At the center frequency of 60GHz, the port isolation is higher than 34 dB and the input 1-dB compression point (IP1dB) is +6.9 dBm.