A CMOS Low-Noise, Low-Dropout Regulator for Transceiver SOC Supply Management

2006 IEEE International SOC Conference Pub Date : 2006-09-01 DOI:10.1109/SOCC.2006.283832

W. Oh, B. Bakkaloglu, B. Aravind, Siew Kuok Hoon

引用次数: 8

Abstract

Low-noise, low-dropout (LN-LDO) regulators are critical for supply regulation of deep-submicron analog baseband and RF system-on-chip designs. A low 1/f noise LDO regulator utilizing a chopper stabilized error amplifier is introduced. A secondary amplifier with supply ripple subtraction stage is used for PSR improvement. With the proposed techniques, less than 180 nV/radicHz output noise spectral density and 50 dB of PSR is measured at 10 kHz frequency. With chopping frequencies up to 1MHz, the regulator achieves 5 mV/25 mA load regulation at 100 muA quiescent current. The LN-LDO is designed and fabricated on a 0.25mum, digital CMOS process with five level metal occupying 0.54 mm2.

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用于收发器SOC电源管理的CMOS低噪声、低差稳压器

低噪声、低差(LN-LDO)稳压器对于深亚微米模拟基带和射频片上系统设计的电源调节至关重要。介绍了一种利用斩波稳定误差放大器的低1/f噪声LDO稳压器。采用带电源纹波减级的二次放大器来提高PSR。利用所提出的技术，在10 kHz频率下测量到小于180 nV/radicHz的输出噪声谱密度和50 dB的PSR。斩波频率高达1MHz，稳压器在100 muA静态电流下实现5 mV/25 mA负载调节。LN-LDO是在0.25 mm的数字CMOS工艺上设计和制造的，五层金属占据0.54 mm2。

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2006 IEEE International SOC Conference

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