{"title":"A new method for analysis of cycling-induced degradation components in split-gate flash memory cells","authors":"Y. Tkachev, A. Kotov","doi":"10.1109/IIRW.2013.6804173","DOIUrl":null,"url":null,"abstract":"A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.
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