A novel study and research on multilayer AlAs/GaAs quantum dot inner layer for solar cell applications

H. John, D. Moni, G. P. Rubesh
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Abstract

Quantum dot solar cell is effectively used in many solar applications to obtain the maximum conversion efficiency. Using materials such as InAs and GaAs or the combination of strained InGaAs/AlGaAs on GaAs substrate provides an improved efficiency. Multi-layer quantum cells provides better energy coupling than other existing models defining the rate equations in terms of their applications in the current research in solar cell applications. The proposed research work addresses the issues present in the earlier solar cell applications by a deep literature survey and then the proposed model is designed using multilayer materials such as AlAs and GaAs quantum dot solar cells. The proposed model provides an improved conversion efficiency of 26.79% and the results are compared for all the available layers.
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应用于太阳能电池的多层AlAs/GaAs量子点内层的新研究
量子点太阳能电池被有效地应用于许多太阳能应用中,以获得最大的转换效率。在GaAs衬底上使用InAs和GaAs等材料或应变InGaAs/AlGaAs的组合可以提高效率。多层量子电池提供了比其他现有模型更好的能量耦合,定义了它们在当前太阳能电池应用研究中的速率方程。通过深入的文献调查,解决了早期太阳能电池应用中存在的问题,然后使用多层材料(如AlAs和GaAs量子点太阳能电池)设计了所提出的模型。该模型的转换效率提高了26.79%,并对所有可用层的结果进行了比较。
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