Femtosecond all-optical devices for tera-bit/sec optical networks

O. Wada
{"title":"Femtosecond all-optical devices for tera-bit/sec optical networks","authors":"O. Wada","doi":"10.1109/IEDM.2000.904389","DOIUrl":null,"url":null,"abstract":"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of communication network throughput to enter the 1 Tb/s to 10 Tb/s range. This paper discusses the requirements of optoelectronic devices operating in the femtosecond time domain and reviews recent progress of novel devices, such as femtosecond devices for ultrashort pulse generation, compression and switching.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of communication network throughput to enter the 1 Tb/s to 10 Tb/s range. This paper discusses the requirements of optoelectronic devices operating in the femtosecond time domain and reviews recent progress of novel devices, such as femtosecond devices for ultrashort pulse generation, compression and switching.
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用于兆位/秒光网络的飞秒全光器件
超快光电器件对于满足未来通信网络吞吐量进入1tb /s到10tb /s范围的要求至关重要。本文讨论了在飞秒时域工作的光电器件的要求,并综述了新型器件的最新进展,如用于超短脉冲产生、压缩和开关的飞秒器件。
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