New de-embedding technique based on Cold-FET measurement

G. Pailloncy, J. Raskin
{"title":"New de-embedding technique based on Cold-FET measurement","authors":"G. Pailloncy, J. Raskin","doi":"10.1109/EMICC.2006.282682","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282682","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于冷场效应晶体管测量的去嵌入新技术
在本文中,我们提出了一种新的去嵌入技术,它不需要任何专用的射频测试结构。这导致晶圆片上的表面积大大减少。此外,该技术使我们能够突破可能影响未来设备射频性能精度的再接触和色散问题
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Capabilities of a 10 GHz MEMS based VCO CMOS Large Signal and RF Noise Model for CAD LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping Compact RF Modeling of Multiple-Gate MOSFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1