G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy
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引用次数: 3
Abstract
In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.
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