Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022462
G. Ferrante, F. Principato, A. Caddemi, N. Donato, G. Tuccari
Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.
{"title":"DC and 1/f noise characterization of crogenically cooled pseudomorphic HEMT's","authors":"G. Ferrante, F. Principato, A. Caddemi, N. Donato, G. Tuccari","doi":"10.1109/WOLTE.2002.1022462","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022462","url":null,"abstract":"Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128702846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022477
M. Schicke, K. Schuster
Superconducting GHz electronics can be improved by variable tuning circuits. We present a low temperature (< 150°C) process for the fabrication of niobium (Nb) thin film air bridges as variable capacitors, which can be integrated in Nb superconducting electronics. These elements can be applied for on-chip adjustment of filters, resonators and tuning circuits. Measurements and calculations of the electrostatic actuation of the bridges will be compared.
{"title":"Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits","authors":"M. Schicke, K. Schuster","doi":"10.1109/WOLTE.2002.1022477","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022477","url":null,"abstract":"Superconducting GHz electronics can be improved by variable tuning circuits. We present a low temperature (< 150°C) process for the fabrication of niobium (Nb) thin film air bridges as variable capacitors, which can be integrated in Nb superconducting electronics. These elements can be applied for on-chip adjustment of filters, resonators and tuning circuits. Measurements and calculations of the electrostatic actuation of the bridges will be compared.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132552772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022453
J. Tejada, A. Godoy, A. Palma, P. Cartujo
Fundamental aspects of the p-n junction have been considered in order to obtain an analytical model for generation-recombination (g-r) current noise. Considering neutrality and fixed-bias voltage conditions a fluctuation in the charge trapped in deep levels is related to fluctuations of the charge density and the electric field at the borders of the space-charge region. These variations are then converted to current fluctuations making use of a collective transport noise theory. Generation-recombination current noise in p-n junctions is analyzed at low and high temperatures for different bias conditions.
{"title":"Temperature dependence of generation-recombination noise in p-n junctions","authors":"J. Tejada, A. Godoy, A. Palma, P. Cartujo","doi":"10.1109/WOLTE.2002.1022453","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022453","url":null,"abstract":"Fundamental aspects of the p-n junction have been considered in order to obtain an analytical model for generation-recombination (g-r) current noise. Considering neutrality and fixed-bias voltage conditions a fluctuation in the charge trapped in deep levels is related to fluctuations of the charge density and the electric field at the borders of the space-charge region. These variations are then converted to current fluctuations making use of a collective transport noise theory. Generation-recombination current noise in p-n junctions is analyzed at low and high temperatures for different bias conditions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117004239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022468
C. Ulysse, A. Gaugue, A. Adam, A. Kreisler, J. Villégier, J. Thomassin
Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize Y BaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.
{"title":"High-T/sub c/ superconducting microbolorneter for terahertz applications","authors":"C. Ulysse, A. Gaugue, A. Adam, A. Kreisler, J. Villégier, J. Thomassin","doi":"10.1109/WOLTE.2002.1022468","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022468","url":null,"abstract":"Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize Y BaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126103295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022460
X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus
We study electronic transport and current noise in 50nm gate length PMOSFETs at very low temperature (T<1K). In the linear regime the drain source current versus gate voltage below the threshold voltage exhibits reproducible sharp resonances due to coherent transport through the disordered channel. We present first experiment showing the time dependence of these resonances particularly the amount of random telegraph and 1/f noise which affect the resonance pattern. Implications for sensitive electrometry are discussed.
{"title":"Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime","authors":"X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus","doi":"10.1109/WOLTE.2002.1022460","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022460","url":null,"abstract":"We study electronic transport and current noise in 50nm gate length PMOSFETs at very low temperature (T<1K). In the linear regime the drain source current versus gate voltage below the threshold voltage exhibits reproducible sharp resonances due to coherent transport through the disordered channel. We present first experiment showing the time dependence of these resonances particularly the amount of random telegraph and 1/f noise which affect the resonance pattern. Implications for sensitive electrometry are discussed.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133231998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022478
G. Leroy, J. Gest, P. Tabourier, J. Carru, A. Dégardin, A. Kreisler
s In this paper we present a comparison of DC and electrical noise characteristics of high-temperature superconducting thin films. Two YBaCuO thin films deposited on MgO substrates were studied and compared. The R-T, I-V and electrical noise properties were studied for each film. Noise measurements show that they are more sensitive than the DC ones. They can give evidence of physical phenomena such as pre-transitional superconducting effect.
{"title":"Low frequency noise in YBaCuO superconducting thin films deposited on MgO","authors":"G. Leroy, J. Gest, P. Tabourier, J. Carru, A. Dégardin, A. Kreisler","doi":"10.1109/WOLTE.2002.1022478","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022478","url":null,"abstract":"s In this paper we present a comparison of DC and electrical noise characteristics of high-temperature superconducting thin films. Two YBaCuO thin films deposited on MgO substrates were studied and compared. The R-T, I-V and electrical noise properties were studied for each film. Noise measurements show that they are more sensitive than the DC ones. They can give evidence of physical phenomena such as pre-transitional superconducting effect.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128881099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022446
M. Pavanello, J. Martino, A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, H. van Meer, K. De Meyer
An extended low temperature study of 0.13μm Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied.
{"title":"Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body","authors":"M. Pavanello, J. Martino, A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, H. van Meer, K. De Meyer","doi":"10.1109/WOLTE.2002.1022446","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022446","url":null,"abstract":"An extended low temperature study of 0.13μm Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131061271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022472
M. Dorojevets
The first single-chip superconductor FLUX-1 microprocessor prototype with a target clock frequency of 17-20 GHz has been designed in the Rapid Single Flux Quantum (RSFQ) logic and fabricated using low-temperature 4 kA/cm 2 , 1.75-μm Nb/AlOx/Nb Josephson junction technology. A FLUX-1 chip represents an 8-bit deeply pipelined microprocessor with a new parallel partitioned architecture that has been developed to tolerate interconnect delays and fill long FLUX-1 pipelines with operations. A FLUX-1 chip contains 65,759 Josephson junctions on a 10.6 mm x 13.2 mm die with flip-chip packaging. First FLUX-1 chips fabricated in 2001 are currently under testing at TRW.
采用快速单通量量子(RSFQ)逻辑设计了首个目标时钟频率为17-20 GHz的单芯片超导体Flux -1微处理器原型，并采用低温4 kA/ cm2、1.75 μm Nb/AlOx/Nb Josephson结技术制造。FLUX-1芯片是一种8位深度流水线微处理器，采用新的并行分区架构，可以容忍互连延迟，并通过操作填充长FLUX-1管道。FLUX-1芯片在10.6 mm x 13.2 mm的倒装芯片封装上包含65,759个约瑟夫森结。第一批FLUX-1芯片于2001年制造，目前正在TRW进行测试。
{"title":"A 20-GHz FLUX-1 superconductor RSFQ microprocessor","authors":"M. Dorojevets","doi":"10.1109/WOLTE.2002.1022472","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022472","url":null,"abstract":"The first single-chip superconductor FLUX-1 microprocessor prototype with a target clock frequency of 17-20 GHz has been designed in the Rapid Single Flux Quantum (RSFQ) logic and fabricated using low-temperature 4 kA/cm 2 , 1.75-μm Nb/AlOx/Nb Josephson junction technology. A FLUX-1 chip represents an 8-bit deeply pipelined microprocessor with a new parallel partitioned architecture that has been developed to tolerate interconnect delays and fill long FLUX-1 pipelines with operations. A FLUX-1 chip contains 65,759 Josephson junctions on a 10.6 mm x 13.2 mm die with flip-chip packaging. First FLUX-1 chips fabricated in 2001 are currently under testing at TRW.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"8 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134297352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022447
D. Camin, C. Colombo, V. Grassi
We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.
{"title":"Low frequency noise versus temperature spectroscopy of Go JFETs, Si JFETs and Si MOSFETs","authors":"D. Camin, C. Colombo, V. Grassi","doi":"10.1109/WOLTE.2002.1022447","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022447","url":null,"abstract":"We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124694770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022445
E. Suzuki, K. Ishii, T. Sekigawa
Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.
{"title":"New silicon devices beyond CMOS","authors":"E. Suzuki, K. Ishii, T. Sekigawa","doi":"10.1109/WOLTE.2002.1022445","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022445","url":null,"abstract":"Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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