{"title":"A 20 GHz FET amplifier in an integrated finline/microstrip configuration","authors":"J. Ruxton, R. Vahldieck, W. Hoefer","doi":"10.1109/MWSYM.1988.22145","DOIUrl":null,"url":null,"abstract":"A description is given of the design and fabrication of an 20-GHz FET amplifier that uses an integrated combination of finline and microstrip. A broadband finline-to-microstrip transition is presented. The transition incorporates a biasing network to provide unconditional stability. The single-stage amplifier, including transitions, provides better than 6-dB gain over a 1.25-GHz bandwidth.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A description is given of the design and fabrication of an 20-GHz FET amplifier that uses an integrated combination of finline and microstrip. A broadband finline-to-microstrip transition is presented. The transition incorporates a biasing network to provide unconditional stability. The single-stage amplifier, including transitions, provides better than 6-dB gain over a 1.25-GHz bandwidth.<>
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