Pub Date : 1990-05-07DOI: 10.1109/MWSYM.1988.22116
J. Magarshack
A brief overview is given of the main monolithic microwave integrated circuit (MMIC) activities in four European countries. The contributions of seven companies are included, two each in England, France, and Germany, and one in Italy. Emphasis is on original contributions from the different groups. These include specific MMIC component designs, architectures, millimeter-wave applications, modeling, libraries and packaging. A summary of where the European approach to applications will have a major impact is included.<>
{"title":"European MMIC activities","authors":"J. Magarshack","doi":"10.1109/MWSYM.1988.22116","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22116","url":null,"abstract":"A brief overview is given of the main monolithic microwave integrated circuit (MMIC) activities in four European countries. The contributions of seven companies are included, two each in England, France, and Germany, and one in Italy. Emphasis is on original contributions from the different groups. These include specific MMIC component designs, architectures, millimeter-wave applications, modeling, libraries and packaging. A summary of where the European approach to applications will have a major impact is included.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125684358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22126
J. Izadian, K. Irwin, R. Curby, R. Forse, K. Van Buren
A silicon beam-lead Schottky diode quad with a crossover configuration and a very small size is presented. This rugged, high-performance device is used in the design of miniature single-sided double-balanced mixer circuits. They require no backside metal patterning and provide for simple component mounting. The mixers are readily manufacturable and therefore low cost. The uniplanar design has 6.3+or-0.5 dB conversion loss over the 8-18-GHz band with a 2-GHz intermediate frequency.<>
{"title":"A uni-planar double-balanced mixer using a new miniature beam lead crossover quad","authors":"J. Izadian, K. Irwin, R. Curby, R. Forse, K. Van Buren","doi":"10.1109/MWSYM.1988.22126","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22126","url":null,"abstract":"A silicon beam-lead Schottky diode quad with a crossover configuration and a very small size is presented. This rugged, high-performance device is used in the design of miniature single-sided double-balanced mixer circuits. They require no backside metal patterning and provide for simple component mounting. The mixers are readily manufacturable and therefore low cost. The uniplanar design has 6.3+or-0.5 dB conversion loss over the 8-18-GHz band with a 2-GHz intermediate frequency.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115293217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22146
U. Ghoshal, L. Smith
A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<>
{"title":"Finite element analysis of skin effect in copper interconnects at 77 K and 300 K","authors":"U. Ghoshal, L. Smith","doi":"10.1109/MWSYM.1988.22146","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22146","url":null,"abstract":"A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115677008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22177
R. Olshansky, V. Lanzisera, P. Hill
The use of microwave subcarriers is proposed for providing wideband services in optical subscriber networks. Optical communication system design principles for such systems are reviewed with attention focused on the transmission of multiple video channels to the subscriber. Systems that carry 60 FM channels multiplexed on carriers in the 2.7-5.2-GHz band and 20 frequency-shift-keyed (FSK) 100-Mb/s digital video channels in the 2-6-GHz band are discussed. A hybrid system which carries a 100-Mb/s baseband signal plus 60 FM video channels is also described.<>
{"title":"Microwave multiplexing techniques for wideband lightwave distribution networks","authors":"R. Olshansky, V. Lanzisera, P. Hill","doi":"10.1109/MWSYM.1988.22177","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22177","url":null,"abstract":"The use of microwave subcarriers is proposed for providing wideband services in optical subscriber networks. Optical communication system design principles for such systems are reviewed with attention focused on the transmission of multiple video channels to the subscriber. Systems that carry 60 FM channels multiplexed on carriers in the 2.7-5.2-GHz band and 20 frequency-shift-keyed (FSK) 100-Mb/s digital video channels in the 2-6-GHz band are discussed. A hybrid system which carries a 100-Mb/s baseband signal plus 60 FM video channels is also described.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121060979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22062
G. Hegazi, H. Hung, F. Phelleps, L. Holdeman, A. Cornfeld, T. Smith, J. F. Allison, H. Huang
Monolithic GaAs power amplifiers developed for V-band applications are described. A single-stage amplifier provided >4-dB gain from 50 to 56 GHz, with output power of 95 mW and a power-added efficiency of 11% at 55 GHz. A cascaded amplifier achieved 16.2-dB gain and output power of 85 mW. An optimized device structure together with computer-aided design (CAD) programs resulted in the use of MESFETs with larger gate width than those previously reported, achieving the high-output-power monolithic circuits from the initial design. Built-in, DC-blocking capacitors and bias networks allowed the cascading of these MMICs, providing usable power gain with stable operation.<>
{"title":"V-band monolithic power MESFET amplifiers","authors":"G. Hegazi, H. Hung, F. Phelleps, L. Holdeman, A. Cornfeld, T. Smith, J. F. Allison, H. Huang","doi":"10.1109/MWSYM.1988.22062","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22062","url":null,"abstract":"Monolithic GaAs power amplifiers developed for V-band applications are described. A single-stage amplifier provided >4-dB gain from 50 to 56 GHz, with output power of 95 mW and a power-added efficiency of 11% at 55 GHz. A cascaded amplifier achieved 16.2-dB gain and output power of 85 mW. An optimized device structure together with computer-aided design (CAD) programs resulted in the use of MESFETs with larger gate width than those previously reported, achieving the high-output-power monolithic circuits from the initial design. Built-in, DC-blocking capacitors and bias networks allowed the cascading of these MMICs, providing usable power gain with stable operation.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127212218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22022
M.A. Magerko, E. Strid
Since microwave wafer probe standards are very small physically, it has been assumed that their nonideal characteristics are correspondingly small. This assumption is not completely true and, if the standards are not properly verified, the system is not calibrated to the probe tips, producing measurement errors. A technique is developed to increase the accuracy of these measurements by identifying the calibration standards as imperfect. This procedure minimizes deviations from the linear magnitude and phase values of a one-port measurement system by using a fourth standard whose characteristics are assumed known. After the iterative program converges, values for the standards are calculated. The stub response is then determined and demonstrates a linear variation with frequency. This result verifies the method, calibration standards, and measurement accuracy of the system.<>
{"title":"A technique for improving the accuracy of wafer probe measurements","authors":"M.A. Magerko, E. Strid","doi":"10.1109/MWSYM.1988.22022","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22022","url":null,"abstract":"Since microwave wafer probe standards are very small physically, it has been assumed that their nonideal characteristics are correspondingly small. This assumption is not completely true and, if the standards are not properly verified, the system is not calibrated to the probe tips, producing measurement errors. A technique is developed to increase the accuracy of these measurements by identifying the calibration standards as imperfect. This procedure minimizes deviations from the linear magnitude and phase values of a one-port measurement system by using a fourth standard whose characteristics are assumed known. After the iterative program converges, values for the standards are calculated. The stub response is then determined and demonstrates a linear variation with frequency. This result verifies the method, calibration standards, and measurement accuracy of the system.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124800608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22202
I. Bahl
An approach is presented for realizing circulators in the form of GaAs monolithic microwave integrated circuits (MMICs) without using any ferrite material and external magnets. The configuration is known as an active circulator and is suitable for system applications where a fully integrable, lightweight, and small-size subsystem is required. The circuit is capable of providing 0 dB loss, and return loss and isolation of better than 16 dB and 23 dB, respectively, over an octave or higher bandwidth.<>
{"title":"The design of a 6-port active circulator","authors":"I. Bahl","doi":"10.1109/MWSYM.1988.22202","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22202","url":null,"abstract":"An approach is presented for realizing circulators in the form of GaAs monolithic microwave integrated circuits (MMICs) without using any ferrite material and external magnets. The configuration is known as an active circulator and is suitable for system applications where a fully integrable, lightweight, and small-size subsystem is required. The circuit is capable of providing 0 dB loss, and return loss and isolation of better than 16 dB and 23 dB, respectively, over an octave or higher bandwidth.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125852777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22114
M. Tsuji, H. Shigesawa
An accurate theoretical approach for discontinuity problems in dielectric 3-D (rectangular) waveguides of open type is presented. The essential propagation mechanism of a mode on the 3-D structures is used to develop an improved 2-D model for which the radiation as well as the surface-wave transmission characteristics are derived. This approach takes account of the behavior of both surface-wave modes and continuous spectral waves, and is successfully applied in the design of image-guide grating filters. Experimental results are provided that prove the effectiveness of this approach.<>
{"title":"Challenge to 3-D discontinuous dielectric waveguide circuit analysis","authors":"M. Tsuji, H. Shigesawa","doi":"10.1109/MWSYM.1988.22114","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22114","url":null,"abstract":"An accurate theoretical approach for discontinuity problems in dielectric 3-D (rectangular) waveguides of open type is presented. The essential propagation mechanism of a mode on the 3-D structures is used to develop an improved 2-D model for which the radiation as well as the surface-wave transmission characteristics are derived. This approach takes account of the behavior of both surface-wave modes and continuous spectral waves, and is successfully applied in the design of image-guide grating filters. Experimental results are provided that prove the effectiveness of this approach.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125878862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22181
L. Escotte, J. Mollier, M. Lecreff
A distributed FET model is presented for millimeter-wave frequencies and experimental S-parameters are compared with distributed and lumped model values. Termed the sliced model, this distributed circuit model predicts S-parameters and four noise parameters up to frequency of 40 GHz from microwave noise figure measurements. An example is given that shows good agreement between theoretical data and S-parameters and noise figure measurements up to 26 GHz.<>
{"title":"Noise and small-signal distributed model of millimeter-wave FETs","authors":"L. Escotte, J. Mollier, M. Lecreff","doi":"10.1109/MWSYM.1988.22181","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22181","url":null,"abstract":"A distributed FET model is presented for millimeter-wave frequencies and experimental S-parameters are compared with distributed and lumped model values. Termed the sliced model, this distributed circuit model predicts S-parameters and four noise parameters up to frequency of 40 GHz from microwave noise figure measurements. An example is given that shows good agreement between theoretical data and S-parameters and noise figure measurements up to 26 GHz.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116158452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22143
D. Kother, A. Beyer
The characteristics of the waveguide modes in premagnetized ferrites are described, taking into account the dielectric and magnetic losses. It is shown that the field distributions inside an anisotropic medium-filled rectangular waveguide can be calculated on the basis of a rigorous field theory. The authors then discuss how the field theory can be used for the design of high-quality isolators and phase shifters.<>
{"title":"Considerations on the frequency dependence of waveguide modes in premagnetized ferrites near resonance","authors":"D. Kother, A. Beyer","doi":"10.1109/MWSYM.1988.22143","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22143","url":null,"abstract":"The characteristics of the waveguide modes in premagnetized ferrites are described, taking into account the dielectric and magnetic losses. It is shown that the field distributions inside an anisotropic medium-filled rectangular waveguide can be calculated on the basis of a rigorous field theory. The authors then discuss how the field theory can be used for the design of high-quality isolators and phase shifters.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114061685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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