A 1.9 GHz low voltage CMOS power amplifier for medium power RF applications

A. Giry, J.-M. Fourniert, M. Pons
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引用次数: 34

Abstract

This paper describes the design methodology and measured performances of a monolithic two-stage RF power amplifier realized in a 0.35 /spl mu/m CMOS technology. Under 2.5 V supply, good linearity is achieved and an output power of 23.5 dBm with an associated PAE of 35% is obtained at 19 GHz. The obtained performances give an insight into CMOS potentialities for medium power RF amplification.
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用于中功率射频应用的1.9 GHz低压CMOS功率放大器
本文介绍了一种以0.35 /spl μ l /m CMOS技术实现的单片两级射频功率放大器的设计方法和实测性能。在2.5 V电源下,实现了良好的线性度,在19 GHz下获得了23.5 dBm的输出功率,相关PAE为35%。所获得的性能为CMOS在中功率射频放大方面的潜力提供了深入的见解。
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