{"title":"A comparative study of dielectric materials as nano-plasmonic couplers","authors":"M. G. Saber, R. H. Sagor","doi":"10.1109/IEECON.2014.6925867","DOIUrl":null,"url":null,"abstract":"We present a novel ultra-compact nano-plasmonic coupler using aluminum gallium arsenide (AlGaAs) and silicon-germanium alloy (Si-Ge) as the coupling dielectric materials. The performance of these two materials has been analyzed using the finite-difference time-domain (FDTD) method. The parameters that we have analyzed are coupling efficiency, reflection coefficient, return loss and mismatch loss. At telecom wavelength an efficiency of 51% has been achieved when AlGaAs is used as the dielectric while for Si-Ge it is 48%. The presented structure also provides advantage in the fabrication process since it is a rectangular shaped waveguide having no tapering. The coupler can operate at a broad range of input signal wavelengths.","PeriodicalId":306512,"journal":{"name":"2014 International Electrical Engineering Congress (iEECON)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Electrical Engineering Congress (iEECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEECON.2014.6925867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We present a novel ultra-compact nano-plasmonic coupler using aluminum gallium arsenide (AlGaAs) and silicon-germanium alloy (Si-Ge) as the coupling dielectric materials. The performance of these two materials has been analyzed using the finite-difference time-domain (FDTD) method. The parameters that we have analyzed are coupling efficiency, reflection coefficient, return loss and mismatch loss. At telecom wavelength an efficiency of 51% has been achieved when AlGaAs is used as the dielectric while for Si-Ge it is 48%. The presented structure also provides advantage in the fabrication process since it is a rectangular shaped waveguide having no tapering. The coupler can operate at a broad range of input signal wavelengths.