Low Insertion-loss Stacked Transformers Using Tapered Spirals for High Performance RFICs

V. Vanukuru
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引用次数: 1

Abstract

Spiral inductors with gradually varying width and space (taper) across the turns are known to have higher quality factor (Q). In this paper, for the first time, stacked transformers are shown to significantly benefit from tapered primary and secondary spirals. It is also revealed that tapered stacked transformers are more effective with increased primary/secondary spiral thickness. Prototype stacked transformers are fabricated using a $0.35 {\mu}{{\mathrm {m}}}$ BiCMOS technology with dual thick metal option. Measurements show Q improvements more than 21% (9.9 - 12.04) for primary, 20% (9.81 - 11.78) for secondary thereby resulting in 15% (1.07 - 0.91) reduction in insertion loss of the transformer.
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使用锥形螺旋的低插入损耗堆叠变压器用于高性能rfic
螺旋电感的宽度和间距(锥度)在匝间逐渐变化,已知具有更高的质量因子(Q)。在本文中,首次表明堆叠变压器明显受益于逐渐变细的初级和次级螺旋。随着一次/二次螺旋厚度的增加,锥形堆叠变压器的效率更高。原型堆叠变压器使用$0.35 {\mu}{{\ maththrm {m}}}$ BiCMOS技术制造,具有双厚金属选项。测量结果表明,一次变压器的Q值提高了21%(9.9 - 12.04),二次变压器的Q值提高了20%(9.81 - 11.78),因此变压器的插入损耗降低了15%(1.07 - 0.91)。
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A W-Band SiGe Transceiver with Built-in Self-Test A 28 GHz Static CML Frequency Divider with Back-Gate Tuning on 22-nm CMOS FD-SOI Technology [Copyright notice] RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump Compact Modeling of Series Stacked Tapered Spiral Inductors
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