{"title":"CAD Modeling of 2 μm SOS-MOS Transistor and the Parameter Acquisition on an Automatic System","authors":"N. Ballay, B. Baylac, Patrick Ledanois","doi":"10.1109/ESSCIRC.1980.5468759","DOIUrl":null,"url":null,"abstract":"We present a CAD model of SOS-MOS transistor with the channel length in the range of 2 μm, and the method for the parameter acquisition on an automatic system driven by a desk-top computer, for the case of the bulk not externally available.","PeriodicalId":168272,"journal":{"name":"ESSCIRC 80: 6th European Solid State Circuits Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 80: 6th European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1980.5468759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a CAD model of SOS-MOS transistor with the channel length in the range of 2 μm, and the method for the parameter acquisition on an automatic system driven by a desk-top computer, for the case of the bulk not externally available.
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