Y. Olikh, O. Lyubchenko, M. Tymochko, Y. Lepikh, Svitlana Gapochenko, O. Olikh
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引用次数: 0
Abstract
The use of pulsed ultrasound loading for dynamic modification of current flow processes in semiconductor materials was considered. It was shown that the revealed features of time, temperature, amplitude, and frequency characteristics of the acoustoconductivity open new methodical possibilities for studying the defective structure of semiconductors.
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