III-V Nitrides For Optical Emitters

H. Morkoç
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Abstract

The ever increasing need for higher density optical storage and full color display technologies is driving researchers to develop wide bandgap semiconductor emitter technologies which are active in the green, blue and ultraviolet wavelengths. This is due to the fact that the diffraction limited optical storage density increases quadratically as the probe laser wavelength is reduced. Wide bandgap emitters are also bringing semiconductor technology to full color displays.' For the first time, all three primary colors can be generated using semiconductor technology. Already InGaN/AlGaN DH LEDs, produced by Nichia Chemical Industries, Ltd., are capable of producing about 2 cd of luminosity at blue and blue-green wavelengths of the visible spectrum.
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用于光发射器的III-V氮化物
对高密度光存储和全彩色显示技术的需求不断增长,促使研究人员开发在绿色、蓝色和紫外线波段活跃的宽带隙半导体发射器技术。这是由于衍射极限光存储密度随着探测激光波长的减小呈二次增长。宽带隙发射器也将半导体技术带入了全彩显示器。”这是第一次,所有三种原色都可以用半导体技术产生。日亚化学工业有限公司生产的InGaN/AlGaN DH led已经能够在可见光谱的蓝色和蓝绿色波长下产生大约2 cd的光度。
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