Pub Date : 1994-07-08DOI: 10.1109/LEOSST.1994.700443
I. Bar-Tana, K. Johnson
An optically addressed, optical relaying device placed between crossed polarizers utilizes an array of pixels made up of photodetectors, circuitry, and modulating pads, and an analog liquid crystal to modulate the intensity of an optical signal on a pixel by pixel basis. The photodetector generates a current proportional to the light detected. Once the current exceeds a certain level, the circuitry stores a charge on the modulating pad proportional to the photo-induced current. This stored charge rotates the molecules of the liquid crystal thereby rotating the polarization of the light signal. The output polarizer then attenuates the light beam according to the change in polarization.
{"title":"Adaptive Attenuating Spatial Light Modulator","authors":"I. Bar-Tana, K. Johnson","doi":"10.1109/LEOSST.1994.700443","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700443","url":null,"abstract":"An optically addressed, optical relaying device placed between crossed polarizers utilizes an array of pixels made up of photodetectors, circuitry, and modulating pads, and an analog liquid crystal to modulate the intensity of an optical signal on a pixel by pixel basis. The photodetector generates a current proportional to the light detected. Once the current exceeds a certain level, the circuitry stores a charge on the modulating pad proportional to the photo-induced current. This stored charge rotates the molecules of the liquid crystal thereby rotating the polarization of the light signal. The output polarizer then attenuates the light beam according to the change in polarization.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116769551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700417
J. Cheng, B. Lu, J. Zolper, K. Lear, J. Klemm
We describe a switching technology that performs both optical logic and the spatial routing functions in a dynamically reconfgurable manner, which provides the basis for a programmable optical logic architecture. Cascadable arrays of binary optical switches that integrate vertical-cavity surfaceemitting lasers (VCSELs) with heterojunction phototransistors (HPTs) and photothyristors (PNPNs) can perform optical routing, optical logic, and fan-out reconfigurably at high speed. Eficient, non-latching HF'TNCSEL switches as well as latching PNPNNCSEL switches have been used to perform single-stage optical logic functions,1 including AND, OR, INVERT, NAND, NOR, and XOR. Although more complex Boolean functions can be derived by cascading sequential logic gate arrays, the process is difficult and is hardware-intensive. An alternative approach is to design an optical logic gate array that can be reconfigured and thus be used repeatably to perform sequential logic operations using the same hardware. Gate level reconfigurability allows each array to be re-used to perform different logic and routing functions during successive operations. By buffering the optical outputs of the previous stage while the array is reconfgured, a single logic array can perform the entire process sequence. To implement a cascadable, programmable, and thus reusable optical logic gate array, the spatial routing and logic functions must be integrated. For example, a Boolean function can be expressed in the sum of products form, using dual-rail logic inputs and the AND and OR logic functions. This is illustrated for the simple two-input case in Fig. l(a), which shows the routing and logic functions required in the 3-stage min-term generation process. Its optoelectronic implementation is also shown in Fig. l(a), which uses three sequential logic arrays each containing HPTNCSEL binary optical switchc:s2 with shufne routing interconnections. Figure l(b) shows three of the common gate-level operations involved: optical routing, fan-out, and logic. Since all three stages are identical except for the routing paths, they can be implemented using a single array by programming the control voltages to select the active nodes, the routing paths, and the fan-out of each stage. Reconfigurability allows a single programmable optical logic gate array (OPLA) to be used, provided that the optical outputs of the previous stage are buffered by an optical buffer memory array (OMA). The design and layout of the basic 2x2 binary optical logic gate (2 inputs, 2 outputs) are shown in Fig. l(c) and 2(b), respectively. The switch concatenates two nodes, each of which contains a segmented HPT and a VCSEL. Every HPT is connected to two VCSELs (at least one of which is associated with another node), and each VCSEL is likewise connected to two different HPTs. The pairing or interconnection of nodes defines a logc gate as well as the routing paths. Each HPT segment is controlled by a bias voltage (Vi or V2) and is
我们描述了一种以动态可重构方式执行光逻辑和空间路由功能的交换技术，这为可编程光逻辑架构提供了基础。将垂直腔表面发射激光器(VCSELs)与异质结光电晶体管(hpt)和光晶闸管(pnpn)集成在一起的二元光开关级联阵列可以实现高速可重构的光路由、光逻辑和扇出。高效，非锁存HF'TNCSEL开关以及锁存pnpnnncsel开关已被用于执行单级光学逻辑功能，包括AND, OR, INVERT, NAND, NOR和XOR。虽然更复杂的布尔函数可以通过级联顺序逻辑门阵列派生，但该过程是困难的，是硬件密集型的。另一种方法是设计可重新配置的光逻辑门阵列，从而使用相同的硬件重复执行顺序逻辑操作。门级可重构性允许在连续操作期间重用每个阵列来执行不同的逻辑和路由功能。当阵列重新配置时，通过缓冲前一级的光输出，单个逻辑阵列可以执行整个过程序列。为了实现可级联、可编程和可重复使用的光逻辑门阵列，必须集成空间路由和逻辑功能。例如，布尔函数可以用乘积和的形式表示，使用双轨逻辑输入和与或逻辑函数。图1 (a)以简单的双输入情况为例说明了这一点，图1 (a)显示了3阶段最小项生成过程中所需的路由和逻辑功能。它的光电实现也如图1 (a)所示，它使用三个顺序逻辑阵列，每个阵列包含HPTNCSEL二进制光开关c:s2，具有shufne路由互连。图1 (b)显示了三种常见的门级操作:光路由、扇出和逻辑。由于除了路由路径之外，所有三个阶段都是相同的，因此可以通过编程控制电压来选择每个阶段的活动节点、路由路径和扇出，从而使用单个阵列来实现它们。可重构性允许使用单个可编程光逻辑门阵列(oppla)，前提是前一级的光输出由光缓冲存储器阵列(OMA)缓冲。基本2x2二进制光逻辑门(2个输入，2个输出)的设计和布局分别如图1 (c)和2(b)所示。交换机连接两个节点，每个节点包含一个分段的HPT和一个VCSEL。每个HPT连接到两个VCSEL(其中至少一个与另一个节点关联)，每个VCSEL同样连接到两个不同的HPT。节点的配对或互连定义了逻辑门以及路由路径。每个HPT段由偏置电压(Vi或V2)控制，并串行连接到不同的VCSEL。光输入数据冲击到两个HPT段，根据电压(Vi. V2)，放大的光被路由到VCSEL #1或VCSEL #2(0,1)，或两个VCSEL，在那里数据被光学再生。因此，可以实现备选路由以及2的光扇出。在图2@)中，节点共用相同的输入输出端口，路由由电压(V1,V2)和电压(V2'，V1')控制，这两个电压定义了大量的路由配置。由于VCSEL是一种阈值器件，并且它对来自不同节点的两个hpt进行i:s C O M & ~，因此它将它们放大的光电流求和并确定逻辑结果a。B (A- and -B)或A+B (A- or -B)，分别取决于输入是否有足够的强度来集体或单独打开VCSEL。控制电压(VI,V~，V~ '，V~ ')完全规定了逻辑和路由功能，再生的逻辑输出可以从任何一个VCSEL产生。在(1,O, 1,O)或(O, 1,O, 1)配置(图2)中，对于扇出1，分别从端口a或端口B出现单个光逻辑输出。在(1,1,1,1)配置(图3)中，逻辑输出从两个端口出现，用于光扇出2。分别在图1 (a,b)和图3(a,b)中实验演示了带扇出和不带扇出的二进制逻辑。这为紧凑的动态可编程逻辑门阵列提供了灵活的技术。
{"title":"Monolithic Binary Optical Logic Gates With Programmable Optical Routing","authors":"J. Cheng, B. Lu, J. Zolper, K. Lear, J. Klemm","doi":"10.1109/LEOSST.1994.700417","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700417","url":null,"abstract":"We describe a switching technology that performs both optical logic and the spatial routing functions in a dynamically reconfgurable manner, which provides the basis for a programmable optical logic architecture. Cascadable arrays of binary optical switches that integrate vertical-cavity surfaceemitting lasers (VCSELs) with heterojunction phototransistors (HPTs) and photothyristors (PNPNs) can perform optical routing, optical logic, and fan-out reconfigurably at high speed. Eficient, non-latching HF'TNCSEL switches as well as latching PNPNNCSEL switches have been used to perform single-stage optical logic functions,1 including AND, OR, INVERT, NAND, NOR, and XOR. Although more complex Boolean functions can be derived by cascading sequential logic gate arrays, the process is difficult and is hardware-intensive. An alternative approach is to design an optical logic gate array that can be reconfigured and thus be used repeatably to perform sequential logic operations using the same hardware. Gate level reconfigurability allows each array to be re-used to perform different logic and routing functions during successive operations. By buffering the optical outputs of the previous stage while the array is reconfgured, a single logic array can perform the entire process sequence. To implement a cascadable, programmable, and thus reusable optical logic gate array, the spatial routing and logic functions must be integrated. For example, a Boolean function can be expressed in the sum of products form, using dual-rail logic inputs and the AND and OR logic functions. This is illustrated for the simple two-input case in Fig. l(a), which shows the routing and logic functions required in the 3-stage min-term generation process. Its optoelectronic implementation is also shown in Fig. l(a), which uses three sequential logic arrays each containing HPTNCSEL binary optical switchc:s2 with shufne routing interconnections. Figure l(b) shows three of the common gate-level operations involved: optical routing, fan-out, and logic. Since all three stages are identical except for the routing paths, they can be implemented using a single array by programming the control voltages to select the active nodes, the routing paths, and the fan-out of each stage. Reconfigurability allows a single programmable optical logic gate array (OPLA) to be used, provided that the optical outputs of the previous stage are buffered by an optical buffer memory array (OMA). The design and layout of the basic 2x2 binary optical logic gate (2 inputs, 2 outputs) are shown in Fig. l(c) and 2(b), respectively. The switch concatenates two nodes, each of which contains a segmented HPT and a VCSEL. Every HPT is connected to two VCSELs (at least one of which is associated with another node), and each VCSEL is likewise connected to two different HPTs. The pairing or interconnection of nodes defines a logc gate as well as the routing paths. Each HPT segment is controlled by a bias voltage (Vi or V2) and is ","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115129970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The State Of Blue/green ZnSe-based Laser Diodes","authors":"R. Gunshor, A. Nurmikko, J. Han, A. Salokatve","doi":"10.1109/LEOSST.1994.700547","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700547","url":null,"abstract":"We will describe a CW room temperature laser diode employing Zn(Se,Te) graded contacts to p-ZnSe, and having a threshold below 30mA at 6.8V.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"575 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123072565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700529
R. P. Schneider, K. Lear, K. Choquette, M. Crawford, K. Killeen, S. Kilcoyne, J. Figiel
Abstract Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.
{"title":"Metalorganic Vapor Phase Epitaxial Growth Of Red And Infrared Vertical-cavity Surface-emitting Laser Diodes","authors":"R. P. Schneider, K. Lear, K. Choquette, M. Crawford, K. Killeen, S. Kilcoyne, J. Figiel","doi":"10.1109/LEOSST.1994.700529","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700529","url":null,"abstract":"Abstract Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125846215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700538
W. Tsang, R. Kapre, T. Chiu, M.D. Williams, J. F. Ferguson
{"title":"Chemical Beam Etching With Monolayer Control","authors":"W. Tsang, R. Kapre, T. Chiu, M.D. Williams, J. F. Ferguson","doi":"10.1109/LEOSST.1994.700538","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700538","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125882699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700433
H. Takahara, S. Matsui, S. Koike
An opto-electronic multichip module (OE-MCM) has been developed for high speed and wide-band communication systems(1). In this work, the opto-electronic performance for the interconnection between flip-chip bonded photodiodes (PDs) and fluorinated polyimide waveguides on the OE-substrtate is studied. A 3.5 GHzbandwidth response of the interconnection was achieved by using total internal reflection (TIR) mirrors. Low loss (0.4 dB/cm at a 1.3,U m wavelength) polyimide waveguides (50 f l m wide and 87.5 p m high) were fabricated on a copper-polyimide multilayer substrate by using a conventional MCM process and reactive ion etching(2) (3). The waveguide-to-PD interconnection is attained by using a TIR mirror fabricated at the edge of the waveguides, while tilting the OE-substrate to the normal direction of the cathode. The mirror angle was easily determined to be 44.5" from the radiated reflection-beam angle by using the far-field pattern method. The reflection loss of the mirror is less than 1.5 dB at a 1.3-,U m wavelength. An InP PD was easily flip-chip bonded with conventional Sn/Pb (60/40) solder balls positioned in the solder ball guides. The propagated light in the waveguide is totally reflected by the mirror. The bandwidth was measured while propagating the light using a heterodyne optical sweeper (1.55-,U m wavelength). The output of the PD was connected directly to a component analyzer. The frequency response of the PD with a sensitive diameter of 80 p m is shown in Fig. 4. bandwidth was determined to be 3.5 GHz, being limited by the PD response. This optical interconnection will therefore be useful in developing high speed and wide-band OE-MCMs. A schematic representation of the OE-MCM is shown in Fig. 1.
一种用于高速宽带通信系统的光电多芯片模块(OE-MCM)已经被开发出来(1)。本文研究了倒装键合光电二极管(PDs)与氟化聚酰亚胺波导在oe衬底上互连的光电性能。通过使用全内反射(TIR)镜，实现了3.5 ghz的带宽响应。利用传统的MCM工艺和反应离子蚀刻(2)，在铜-聚酰亚胺多层衬底上制作了低损耗(在1.3 μ m波长下0.4 dB/cm)的聚酰亚胺波导(宽50 f / m，高87.5 p / m)。波导与pd的互连是通过在波导边缘制作TIR反射镜实现的，同时将e-衬底倾斜到阴极的法向。利用远场方向图法可以很容易地确定反射镜角度为辐射反射束角的44.5”。在1.3 μ m波长处，反射镜的反射损耗小于1.5 dB。InP PD很容易与位于锡球导轨中的传统Sn/Pb(60/40)锡球进行倒装键合。波导中传播的光被镜面完全反射。在使用外差光扫频器(1.55-，μ m波长)传播光时测量带宽。PD的输出直接连接到组件分析仪。灵敏度直径为80 pm的PD的频率响应如图4所示。受PD响应限制，确定带宽为3.5 GHz。因此，这种光互连将有助于开发高速宽带oe - mcm。OE-MCM的示意图如图1所示。
{"title":"Optical Interconnection Between Flip-chip Bonded Photodiodes And Optical Polyimide Waveguides On An Opto-electronic Multichip Module","authors":"H. Takahara, S. Matsui, S. Koike","doi":"10.1109/LEOSST.1994.700433","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700433","url":null,"abstract":"An opto-electronic multichip module (OE-MCM) has been developed for high speed and wide-band communication systems(1). In this work, the opto-electronic performance for the interconnection between flip-chip bonded photodiodes (PDs) and fluorinated polyimide waveguides on the OE-substrtate is studied. A 3.5 GHzbandwidth response of the interconnection was achieved by using total internal reflection (TIR) mirrors. Low loss (0.4 dB/cm at a 1.3,U m wavelength) polyimide waveguides (50 f l m wide and 87.5 p m high) were fabricated on a copper-polyimide multilayer substrate by using a conventional MCM process and reactive ion etching(2) (3). The waveguide-to-PD interconnection is attained by using a TIR mirror fabricated at the edge of the waveguides, while tilting the OE-substrate to the normal direction of the cathode. The mirror angle was easily determined to be 44.5\" from the radiated reflection-beam angle by using the far-field pattern method. The reflection loss of the mirror is less than 1.5 dB at a 1.3-,U m wavelength. An InP PD was easily flip-chip bonded with conventional Sn/Pb (60/40) solder balls positioned in the solder ball guides. The propagated light in the waveguide is totally reflected by the mirror. The bandwidth was measured while propagating the light using a heterodyne optical sweeper (1.55-,U m wavelength). The output of the PD was connected directly to a component analyzer. The frequency response of the PD with a sensitive diameter of 80 p m is shown in Fig. 4. bandwidth was determined to be 3.5 GHz, being limited by the PD response. This optical interconnection will therefore be useful in developing high speed and wide-band OE-MCMs. A schematic representation of the OE-MCM is shown in Fig. 1.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116458948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700506
M. Saruwatari
A b s t ra c t -The re('cn I progress t owu i d ltlr ru/(i SI opl'icu 1 ,fihi> r t ru nsni ission systems employing a I 1 opticul lime-domnin n7idtiple.xiti~ (7DM) frclriiiqrre.z is reviewed. 0utlinc.s of (he latest I00Ghitl.s transnzission experiments und lhci ri~lutecl Icc.hno1ogie.r are de.vc,rihed including state-of-the-art performuni'es arulBiture prospects. All-optical time-domain signal processing technologies are now being developed for realizing ultrahigh-bit-rate optical time-division-multiplexing (TDM) transmission systems [ 1-51. The major technologies include high-speed picosecond optical pulse generation [6-81, all-optical multi/demultiplexing (MUX/DEMUX) [9171, linear or soliton pulse transmission, and optical timing extraction techniques [4,18-24]. Here, recent progress on very high-speed optical TDM transmission up to 100Gbit/s is introduced together with the essentiial technologies. Figure 1 depicts the experimental setup of the latest lOO-Gbit/s transmission experiment over 200 km that uses newly developed optical TDM technologies [4]. A wavelength-tunable mode-locked Er fiber laser (ML-EDFL) [8] provides stable 6.3-GHz, :3.5 ps transform-limited (TL) pulses for external modulation (2"-1, PRBS) by a LiNb03 modulator. A 16:l planar lightwave circuit (PLC) multiplexer stably multiplexes the baseline 6.3 Gbit/s signal into 100 Gbit/s. The TDM IOO-Gbit/s signal is then transmitted through five fibers connected via four in-line Ed-doped fiber amplifiers. The center wavelength of the ML-EDFL is set to the zero dispersion wavelength of the 200 km fiber. At the receiver side, a novel timing extraction phase-locked loop (PLL) [4] using a traveling-wave laser-diode amplifier (TW-LDA), used a$ a phase detector, extracts the prescaled clock of 6.3-GHz from the received 100-Gbit/s signal. Using the four-wave-mixing (FWM) process instead of gainmodulation as adopted in the previous PLL [ 221, very stable polarization-independent (PI) timing extraction is achieved with the lowered jitter of 0 . 3 ~ ~ . The extracted 6.3-GHz clock is used to drive both the all-optical DEMUX and the optical receiver. Finally, the novel PI-FWM demultiplexer (DEMUX) [ 171 using a polarization-maintaining 3 k.m fiber demultiplexes the 100Gbitls signal into the 6.3GbiUs original. With this configuration, a 100 Gbitls optical signal, 16 x 6.3-Gbit/s, has been successfully transmitted through a 200-km fiber without any polarization controllers. 6.3 G bivs 100 Gbit/s
{"title":"Progress Toward Ultrahigh-bit-rate All-optical TDM Transmission Systems","authors":"M. Saruwatari","doi":"10.1109/LEOSST.1994.700506","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700506","url":null,"abstract":"A b s t ra c t -The re('cn I progress t owu i d ltlr ru/(i SI opl'icu 1 ,fihi> r t ru nsni ission systems employing a I 1 opticul lime-domnin n7idtiple.xiti~ (7DM) frclriiiqrre.z is reviewed. 0utlinc.s of (he latest I00Ghitl.s transnzission experiments und lhci ri~lutecl Icc.hno1ogie.r are de.vc,rihed including state-of-the-art performuni'es arulBiture prospects. All-optical time-domain signal processing technologies are now being developed for realizing ultrahigh-bit-rate optical time-division-multiplexing (TDM) transmission systems [ 1-51. The major technologies include high-speed picosecond optical pulse generation [6-81, all-optical multi/demultiplexing (MUX/DEMUX) [9171, linear or soliton pulse transmission, and optical timing extraction techniques [4,18-24]. Here, recent progress on very high-speed optical TDM transmission up to 100Gbit/s is introduced together with the essentiial technologies. Figure 1 depicts the experimental setup of the latest lOO-Gbit/s transmission experiment over 200 km that uses newly developed optical TDM technologies [4]. A wavelength-tunable mode-locked Er fiber laser (ML-EDFL) [8] provides stable 6.3-GHz, :3.5 ps transform-limited (TL) pulses for external modulation (2\"-1, PRBS) by a LiNb03 modulator. A 16:l planar lightwave circuit (PLC) multiplexer stably multiplexes the baseline 6.3 Gbit/s signal into 100 Gbit/s. The TDM IOO-Gbit/s signal is then transmitted through five fibers connected via four in-line Ed-doped fiber amplifiers. The center wavelength of the ML-EDFL is set to the zero dispersion wavelength of the 200 km fiber. At the receiver side, a novel timing extraction phase-locked loop (PLL) [4] using a traveling-wave laser-diode amplifier (TW-LDA), used a$ a phase detector, extracts the prescaled clock of 6.3-GHz from the received 100-Gbit/s signal. Using the four-wave-mixing (FWM) process instead of gainmodulation as adopted in the previous PLL [ 221, very stable polarization-independent (PI) timing extraction is achieved with the lowered jitter of 0 . 3 ~ ~ . The extracted 6.3-GHz clock is used to drive both the all-optical DEMUX and the optical receiver. Finally, the novel PI-FWM demultiplexer (DEMUX) [ 171 using a polarization-maintaining 3 k.m fiber demultiplexes the 100Gbitls signal into the 6.3GbiUs original. With this configuration, a 100 Gbitls optical signal, 16 x 6.3-Gbit/s, has been successfully transmitted through a 200-km fiber without any polarization controllers. 6.3 G bivs 100 Gbit/s","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122954646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700412
J. Morikuni, S.M. Kang
Device modeling for circuit simulation provides an essential coupling between new device development and its application toward systems integration. In the exploratory research and development environment, it is important to analyze the potential impact of new devices on systems performance by timely development of device models and circuit simulation capability. The conventional approach, which involves developing and coding new model equations into an existing circuit simulator, requires a significant amount of time not only for model development, but also for code debugging. SMILE (illinois Simulator for the Modeling of Integrated-circuit Level Elements) was created to overcome this bottleneck. iSMILE is a versatile “SPICE-like‘’ circuit simulator which allows for easy userdefinition of new circuit-level models [ 11. While a major portion of the program source code must be rewritten i n order to introduce a new device model into a conventional circuit simulator, with SMILE, implementation of a new model requires only the creation of a Fortran model input file (MIF) containing the circuit model topology and the device terminal characteristics. SMILE automatically generates source code internally to build simulation capability based on this model file. Once the new model has been added, it can be accessed at the input deck level like other standard devices such as the MOSFET and the BJT. In view of the fact that it can be used to easily implement new, user-defined models, iSMILE can be considered a superset of SPICE. The ease of new model implementation makes iSMILE ideal for simulating optoelectronic components for which new models have not yet been implemented in existing circuit simulators. In addition to models for conventional electronic devices (MOSFET, BJT, diode, etc.), we have implemented models for MSM photodetectors [2], multiple quantum-well laser diodes [3], and HEMTs 141 for use in optoelectronic circuit simulation. The MSM, laser diode and HEMT models have been successfully used in the design and simulation of several optoelectronic subsystems including both photoreceivers and transmitters. As an example, the equivalent-circuit model for the quantum-well laser diode is depicted in Figure I . This model is based on the well-known rate equations which describe the rates of change of the charge and photon density in the quantum well in terms of physical laser parameters:
电路仿真的器件建模为新器件的开发及其在系统集成中的应用提供了必要的耦合。在探索性研发环境下，及时开发器件模型和电路仿真能力，分析新器件对系统性能的潜在影响是非常重要的。传统的方法是将新的模型方程开发和编码到现有的电路模拟器中，这不仅需要大量的时间来进行模型开发，而且还需要大量的时间来进行代码调试。SMILE (illinois Simulator for Modeling of integrated circuit Level Elements)就是为了克服这一瓶颈而诞生的。iSMILE是一个多功能的“SPICE-like”电路模拟器，允许用户轻松定义新的电路级模型[11]。虽然程序源代码的主要部分必须重写，以便将新的设备模型引入传统的电路模拟器，但使用SMILE，新模型的实现只需要创建一个包含电路模型拓扑和设备终端特性的Fortran模型输入文件(MIF)。SMILE在内部自动生成源代码，以基于该模型文件构建仿真功能。一旦添加了新模型，就可以像其他标准器件(如MOSFET和BJT)一样在输入层访问它。鉴于它可以很容易地实现新的用户定义模型，iSMILE可以被认为是SPICE的超集。新模型实现的便利性使iSMILE成为模拟现有电路模拟器中尚未实现新模型的光电元件的理想选择。除了传统电子器件(MOSFET, BJT，二极管等)的模型外，我们还实现了MSM光电探测器[2]，多量子阱激光二极管[3]和用于光电电路仿真的HEMTs 141的模型。MSM、激光二极管和HEMT模型已经成功地用于设计和仿真多个光电子系统，包括光电接收器和发射器。作为一个例子，量子阱激光器的等效电路模型如图1所示。该模型基于众所周知的速率方程，该方程根据物理激光参数描述了量子阱中电荷和光子密度的变化率:
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Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700527
F. Kish, F. Steranka, D. Defevere, D. A. Vanderwater, K. Park
{"title":"Very High-efficiency Transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP Light-emitting Diodes","authors":"F. Kish, F. Steranka, D. Defevere, D. A. Vanderwater, K. Park","doi":"10.1109/LEOSST.1994.700527","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700527","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132060404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700485
R. Leheny
Optoelectronics for Broadband Infrastructure Technology R. E Leheny, ARPAIMTO, Arlington, VA Plans are evolving to meet the future needs of the National Information Infrastructure (NIT), and the role for optoelectronics technology in providing broadband network physical layer support is being defined. In this talk we will review the technology options available to meet NIT network needs and discuss research directions required to meet these needs.
{"title":"Optoelectronics For Broadband Infrastructure Technology","authors":"R. Leheny","doi":"10.1109/LEOSST.1994.700485","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700485","url":null,"abstract":"Optoelectronics for Broadband Infrastructure Technology R. E Leheny, ARPAIMTO, Arlington, VA Plans are evolving to meet the future needs of the National Information Infrastructure (NIT), and the role for optoelectronics technology in providing broadband network physical layer support is being defined. In this talk we will review the technology options available to meet NIT network needs and discuss research directions required to meet these needs.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129974012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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