Continuum Fluid Models for Plasma Etching Reactor Control

Abstract

In this paper, a novel implicit implementation of the ENO-Roe scheme is presented. For the particular example considered here (a fluid plasma model), cpu time requirements for the implicit scheme were found to be as much as three orders of magnitude less than that for the explicit scheme. This indicates that implicit implementation may be critical for solution of multi-dimensional problems with reasonable computer resources. These simulation results allow the computation of steady-state gains between variables that affect and are affected by the plasma presence.