Impact on gate oxide material of inverted ‘T’ Junctionless FinFET at 22 nm technology node

Abstract

The paper investigates the impact of effective oxide thickness (EOT) on inverted ‘T’ Junctionless FinFET (JLT) on an SOI platform. Due to the scaling trends the isolation at gate/channel interface is important to understand; accordingly an EOT with 1 and 1.5 nm is used in our simulation work. With the fixed EOT values the physical oxide thickness are calculated for different dielectric materials and short channel parameters along with analog performances are investigated. At nanoscale regime, JLTs are predominant with uniform high doping concentration with no doping gradients, and the bulk conduction mechanism is preferred. The two parameters VTH extraction method and the ratio TK/LG are included which significantly down scale the short channel effects (SCEs).