Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076995
A. Soundarya, V. Santhi
In wireless Sensor Networks (WSNs), the coverage hole is obtained due to random deployment of sensor nodes over the dense forest and terrain lands. Coverage holes are the fundamental issue which affects the quality of the WSNs. Only if the coverage holes are detected, they are patched using sensor nodes known as healing. It is not possible to find the coverage holes manually. Therefore the coverage hole, detecting and healing have become a major challenges in order to achieve the best coverage of the WSNs. For this purpose, we proposed the algorithm named as a Delaunay Triangulation merged with the virtual edge based method; it helps to detect the coverage holes in WSNs. The algorithm helps to detect the accurate size of the coverage holes when compared to the existing tree based method. Experimental results reveal that the proposed method detects the coverage hole more accurately and finally patch the coverage holes with minimum number of nodes.
{"title":"An efficient algorithm for coverage hole detection and healing in wireless sensor networks","authors":"A. Soundarya, V. Santhi","doi":"10.1109/IEMENTECH.2017.8076995","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076995","url":null,"abstract":"In wireless Sensor Networks (WSNs), the coverage hole is obtained due to random deployment of sensor nodes over the dense forest and terrain lands. Coverage holes are the fundamental issue which affects the quality of the WSNs. Only if the coverage holes are detected, they are patched using sensor nodes known as healing. It is not possible to find the coverage holes manually. Therefore the coverage hole, detecting and healing have become a major challenges in order to achieve the best coverage of the WSNs. For this purpose, we proposed the algorithm named as a Delaunay Triangulation merged with the virtual edge based method; it helps to detect the coverage holes in WSNs. The algorithm helps to detect the accurate size of the coverage holes when compared to the existing tree based method. Experimental results reveal that the proposed method detects the coverage hole more accurately and finally patch the coverage holes with minimum number of nodes.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122214040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076993
S. Meena, A. Potnis, Madhuram Mishra, Prashant Dwivedy, Shahbaz Soofi
Image enhancement plays a fundamental role in a variety of applications enhancement is the manner of improving the certain attribute of image and reducing the noise recently much work has already been proposed till now for enhancing the digital images. This paper has presented a relative comparison of a mixture of image enhancement techniques and mostly focused on histogram and fuzzy logic techniques. This paper has shown that the fuzzy logic and histogram based techniques have quite effective results over the available techniques. Use several quality check parameters for analysis purpose such as PSNR, MSE, NAE, AD This paper conclude with suitable future directions to enhance fuzzy based image enhancement technique further.
{"title":"Review and application of different contrast enhancement technique on various images","authors":"S. Meena, A. Potnis, Madhuram Mishra, Prashant Dwivedy, Shahbaz Soofi","doi":"10.1109/IEMENTECH.2017.8076993","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076993","url":null,"abstract":"Image enhancement plays a fundamental role in a variety of applications enhancement is the manner of improving the certain attribute of image and reducing the noise recently much work has already been proposed till now for enhancing the digital images. This paper has presented a relative comparison of a mixture of image enhancement techniques and mostly focused on histogram and fuzzy logic techniques. This paper has shown that the fuzzy logic and histogram based techniques have quite effective results over the available techniques. Use several quality check parameters for analysis purpose such as PSNR, MSE, NAE, AD This paper conclude with suitable future directions to enhance fuzzy based image enhancement technique further.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125839750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076935
Neel Choksi, Dewanshu Sewake, S. Sinha, R. Mukhiya, Rishi Sharma
Ion Sensitive Field Effect Transistor (ISFET) is a popular potentiometric sensor which can be used for chemical and biochemical sensing. This paper presents the modeling of the electrolyte-insulator-semiconductor structure of ISFET using Silvaco TCAD tool. The electrolyte region along with reference electrode has been modeled as a semiconductor with suitable parameters calculated analytically. Silicon nitride is used as the sensing film and it is observed that a sensitivity of 57.143 mV/pH is obtained for pH sensing application. The effect of using different sensing film thicknesses has also been studied and presented. It is observed that the sensitivity of the device reduces as the sensing film thickness is increased.
{"title":"Modeling and simulation of ion-sensitive field-effect transistor using TCAD methodology","authors":"Neel Choksi, Dewanshu Sewake, S. Sinha, R. Mukhiya, Rishi Sharma","doi":"10.1109/IEMENTECH.2017.8076935","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076935","url":null,"abstract":"Ion Sensitive Field Effect Transistor (ISFET) is a popular potentiometric sensor which can be used for chemical and biochemical sensing. This paper presents the modeling of the electrolyte-insulator-semiconductor structure of ISFET using Silvaco TCAD tool. The electrolyte region along with reference electrode has been modeled as a semiconductor with suitable parameters calculated analytically. Silicon nitride is used as the sensing film and it is observed that a sensitivity of 57.143 mV/pH is obtained for pH sensing application. The effect of using different sensing film thicknesses has also been studied and presented. It is observed that the sensitivity of the device reduces as the sensing film thickness is increased.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130892278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076922
N. Laya, A. Poddar, A. Mandal, K. Shivam, J. Kota, R. Dey, S. Moitra
Design of a Half Mode SIW Filter (HMSIW) for Ku band operation has been presented in this paper. Defective Microstrip Structure (DMS) consisting of a single and multiple slots has been introduced and the effect has been studied. The structure is smaller in size and also cost effective due to the half TE10 mode. The effect of introducing single and multiple resonant slots to create stopband within the passband of the filter has been studied validated with simulation results. The proposed technique has been found quite useful in designing HMSIW bandpass filters.
{"title":"Design of Half Mode Substrate Integrated Waveguide (HMSIW) filter with series Defective Microstrip Structure (DMS) for Ku band operation","authors":"N. Laya, A. Poddar, A. Mandal, K. Shivam, J. Kota, R. Dey, S. Moitra","doi":"10.1109/IEMENTECH.2017.8076922","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076922","url":null,"abstract":"Design of a Half Mode SIW Filter (HMSIW) for Ku band operation has been presented in this paper. Defective Microstrip Structure (DMS) consisting of a single and multiple slots has been introduced and the effect has been studied. The structure is smaller in size and also cost effective due to the half TE10 mode. The effect of introducing single and multiple resonant slots to create stopband within the passband of the filter has been studied validated with simulation results. The proposed technique has been found quite useful in designing HMSIW bandpass filters.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122322484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8077022
B. N. Sree, C. Raj, R. Madhavan
Roads accidents account for the highest percentage of fatalities in the world. These mortality rates are also increasing due to negligence and lack of proper care within sufficient time for the victims. The fact that the victim may be unnoticed or unreachable is majorly due to traffic blocks, adverse climatic conditions, improper terrain conditions etc. Unmanned Aerial Vehicles (UAVs) could be used to reduce the number of fatalities to an extent by giving immediate assistance and alerting the concerned authorities. The aim of the work in this paper is to develop approaches for avoidingthe obstacles in the path of UAVs such as trees, tall buildings, electric lines, mobile towers etc. for obtaining a collision free path for navigation. In this paper, sensor and image (fusion) based obstacle avoidance as a means for UAV to quickly and safely reach an accident site. We obtained a decision command by fusing an image with ultrasonic sensor data, which is used for controlling the UAV to avoid obstacles. We then compared the test results of the image-based obstacle avoidance method with the fusion-based obstacle avoidance, where we demonstrated that the decision commands used in fusion method are more accurate.
{"title":"Obstacle avoidance for UAVs used in road accident monitoring","authors":"B. N. Sree, C. Raj, R. Madhavan","doi":"10.1109/IEMENTECH.2017.8077022","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8077022","url":null,"abstract":"Roads accidents account for the highest percentage of fatalities in the world. These mortality rates are also increasing due to negligence and lack of proper care within sufficient time for the victims. The fact that the victim may be unnoticed or unreachable is majorly due to traffic blocks, adverse climatic conditions, improper terrain conditions etc. Unmanned Aerial Vehicles (UAVs) could be used to reduce the number of fatalities to an extent by giving immediate assistance and alerting the concerned authorities. The aim of the work in this paper is to develop approaches for avoidingthe obstacles in the path of UAVs such as trees, tall buildings, electric lines, mobile towers etc. for obtaining a collision free path for navigation. In this paper, sensor and image (fusion) based obstacle avoidance as a means for UAV to quickly and safely reach an accident site. We obtained a decision command by fusing an image with ultrasonic sensor data, which is used for controlling the UAV to avoid obstacles. We then compared the test results of the image-based obstacle avoidance method with the fusion-based obstacle avoidance, where we demonstrated that the decision commands used in fusion method are more accurate.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133316674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076975
S. Agarwal, A. Swetapadma, C. Panigrahi, A. Dasgupta
Line commutated converter based high voltage transmission line fault current rises instantly due to the absence of inductance as which is present in ac. In dc currents there is no natural current zero so interruption of current is difficult and therefore the focus of the paper is to identify the fault in less time so that trip command can be initiated to the dc breaker. The dc lines are economical for long length so at far end distance fault identification is essential. The converter control in dc transmission lines control the power and provides synchronous interconnection between two ac systems. The discrete Fourier transform is used to extract the dc current at rectifier end of the dc transmission line and the processed current is compared with the threshold value to identify the fault. The factors considering the effect of fault location and fault resistance are considered for the accuracy, reliability and selectivity.
{"title":"Fault detection in direct current transmission lines using discrete fourier transform from single terminal current signals","authors":"S. Agarwal, A. Swetapadma, C. Panigrahi, A. Dasgupta","doi":"10.1109/IEMENTECH.2017.8076975","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076975","url":null,"abstract":"Line commutated converter based high voltage transmission line fault current rises instantly due to the absence of inductance as which is present in ac. In dc currents there is no natural current zero so interruption of current is difficult and therefore the focus of the paper is to identify the fault in less time so that trip command can be initiated to the dc breaker. The dc lines are economical for long length so at far end distance fault identification is essential. The converter control in dc transmission lines control the power and provides synchronous interconnection between two ac systems. The discrete Fourier transform is used to extract the dc current at rectifier end of the dc transmission line and the processed current is compared with the threshold value to identify the fault. The factors considering the effect of fault location and fault resistance are considered for the accuracy, reliability and selectivity.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123611351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8077017
Syam Gopi, A. Muir, R. R. Bhavani
Human Robot interaction (HRI) is the study of interaction between humans and robots. Such interaction can be difficult when untrained people use robots. This work is mainly focus on untrained users in the developing world, i.e. people with less exposure to technology, and less familiarity with interaction methods. This paper reports on work to develop a prototype for gesture based communication between untrained humans and mobile robots (UGVs), in the form of a wearable device on the hand. The study robot is the Husky A200 from Clear path Robotics.
{"title":"Naturalistic gestures based Human Robot Interaction on a UGV for outdoor use","authors":"Syam Gopi, A. Muir, R. R. Bhavani","doi":"10.1109/IEMENTECH.2017.8077017","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8077017","url":null,"abstract":"Human Robot interaction (HRI) is the study of interaction between humans and robots. Such interaction can be difficult when untrained people use robots. This work is mainly focus on untrained users in the developing world, i.e. people with less exposure to technology, and less familiarity with interaction methods. This paper reports on work to develop a prototype for gesture based communication between untrained humans and mobile robots (UGVs), in the form of a wearable device on the hand. The study robot is the Husky A200 from Clear path Robotics.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128675936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076860
Goffar Ali Sarkar, B. Rana, S. K. Parui, S. E. Rahaman
In this paper isolation enhancement of a dual polarized dielectric resonator antenna (DRA) is explored by feed modification. At first, we have designed a dual polarized DRA employing two orthogonal microstrip lines directly underneath the DRA to couple the energy from microstrip lines to DRA. Port isolation of −21 dB has been noticed at resonant frequency of 6.55 GHz for this configuration. To improve the port isolation, we have made microstrip to probe transition at the side of the DRA. For this modified configuration port isolation of −27 dB has been observed. The probes can be considered as a vertical electric current source. The probes should be placed in such a way, maximum energy couples from probes to the DRA. The proposed antenna offers peak gain of 6 dBi at the resonant frequency.
{"title":"Port isolation enhancement of a dual polarized rectangular dielectric resonator antenna","authors":"Goffar Ali Sarkar, B. Rana, S. K. Parui, S. E. Rahaman","doi":"10.1109/IEMENTECH.2017.8076860","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076860","url":null,"abstract":"In this paper isolation enhancement of a dual polarized dielectric resonator antenna (DRA) is explored by feed modification. At first, we have designed a dual polarized DRA employing two orthogonal microstrip lines directly underneath the DRA to couple the energy from microstrip lines to DRA. Port isolation of −21 dB has been noticed at resonant frequency of 6.55 GHz for this configuration. To improve the port isolation, we have made microstrip to probe transition at the side of the DRA. For this modified configuration port isolation of −27 dB has been observed. The probes can be considered as a vertical electric current source. The probes should be placed in such a way, maximum energy couples from probes to the DRA. The proposed antenna offers peak gain of 6 dBi at the resonant frequency.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126810729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076924
Goffar Ali Sarkar, B. Rana, S. K. Parui
In this paper a four element direct microstrip line feed hemispherical dielectric resonator antenna (HDRA) array is explored. Initially, a direct microstrip line feed HDRA is designed at 6.4 GHz and gain is observed as 5.2 dBi. The dielectric resonator antenna (DRA) is excited in its fundamental TE111 mode. Next, to enhance the gain a 1×4 linear array is designed. To feed the DRA elements a corporate type of feed network is employed. This is the unique feature of this proposed antenna. The gain is noticed as 10.7 dBi. The proposed antenna offers impedance bandwidth of 7.2% covering frequency range 6.35 GHz to 6.83 GHz.
{"title":"A direct microstrip line feed hemispherical dielectric resonator antenna array","authors":"Goffar Ali Sarkar, B. Rana, S. K. Parui","doi":"10.1109/IEMENTECH.2017.8076924","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076924","url":null,"abstract":"In this paper a four element direct microstrip line feed hemispherical dielectric resonator antenna (HDRA) array is explored. Initially, a direct microstrip line feed HDRA is designed at 6.4 GHz and gain is observed as 5.2 dBi. The dielectric resonator antenna (DRA) is excited in its fundamental TE111 mode. Next, to enhance the gain a 1×4 linear array is designed. To feed the DRA elements a corporate type of feed network is employed. This is the unique feature of this proposed antenna. The gain is noticed as 10.7 dBi. The proposed antenna offers impedance bandwidth of 7.2% covering frequency range 6.35 GHz to 6.83 GHz.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125240732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-28DOI: 10.1109/IEMENTECH.2017.8076932
Abhinav K. Jha, Saheli Das, Soumik Saha, K. S. Ghosal, Superna Sain, S. Choudhury, D. Ghosh
In this paper Substrate Integrated Waveguide based band pass filter is developed in K band for satellite communication applications. A compact iris coupled fourth order band pass filter having a flat pass band from 22.2GHz to 24.76GHz is designed using Rogers RT/Duroid 5880 substrate. The filter has a maximum insertion loss of 0.8dB and a maximum return loss of 17.6dB in the pass band of operation. The filter is highly miniaturized and measures a size of 15mm×28mm×.508mm.
{"title":"CPW fed substrate integrated waveguide based band pass filter in K band","authors":"Abhinav K. Jha, Saheli Das, Soumik Saha, K. S. Ghosal, Superna Sain, S. Choudhury, D. Ghosh","doi":"10.1109/IEMENTECH.2017.8076932","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076932","url":null,"abstract":"In this paper Substrate Integrated Waveguide based band pass filter is developed in K band for satellite communication applications. A compact iris coupled fourth order band pass filter having a flat pass band from 22.2GHz to 24.76GHz is designed using Rogers RT/Duroid 5880 substrate. The filter has a maximum insertion loss of 0.8dB and a maximum return loss of 17.6dB in the pass band of operation. The filter is highly miniaturized and measures a size of 15mm×28mm×.508mm.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126358534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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