Experimental demonstration of silicon-based topological photonic crystal slab at near infrared frequencies and its dynamic tunability (Conference Presentation)

M. Shalaev, W. Walasik, N. Litchinitser
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Abstract

Topological insulators are materials that behave as insulators in their interior but support boundary conducting states due the non-trivial topological order. These edge states are robust to defects and imperfections, allowing lossless energy transport along the surface. Topological insulators were first discovered in field of electronics, but recently photonic analogues of these systems were realized. Most of experimentally demonstrated photonic topological insulators to date are bulky, incompatible with current semiconductor fabrication process or operate in microwave frequency range. In this work, we show silicon photonic-crystal-based Valley-Hall topological insulator operating at telecommunication wavelengths. Light propagation along the trapezoidally-shaped path with four 120 degrees turns is demonstrated and compared with propagation along the straight line. Nearly the same transmittance values for both cases confirm robust light transport in such Valley-Hall topological photonic crystal. In the second part of this talk, we discuss the possibility of dynamic tuning of the proposed topological insulator by modulation of the refractive index of silicon. The modulation is facilitated by shining focused ultraviolet pulsed light onto silicon photonic crystal slab. Ultraviolet light illumination causes formation of electron-hole pairs, excitation of free-carriers and results into decrease of refractive index with estimated modulation on the order of 0.1. Due to the index change, spectral position of the bandgap and the edge states shift allowing their dynamic control. Proposed concept can find applications in communication field for fast all-optical switching and control over light propagation.
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近红外频率下硅基拓扑光子晶体板的实验证明及其动态可调性(会议报告)
拓扑绝缘体是一种内部表现为绝缘体,但由于其非平凡的拓扑顺序而支持边界导电状态的材料。这些边缘状态对缺陷和不完美具有鲁棒性,允许沿表面的无损能量传输。拓扑绝缘体最早是在电子学领域发现的,但近年来实现了这些系统的光子模拟。迄今为止,大多数实验证明的光子拓扑绝缘体体积庞大,与当前的半导体制造工艺不兼容,或者工作在微波频率范围内。在这项工作中,我们展示了基于硅光子晶体的谷-霍尔拓扑绝缘体在电信波长下的工作。光沿着四次120度转弯的梯形路径传播,并与沿直线传播进行了比较。两种情况下几乎相同的透射率值证实了这种谷-霍尔拓扑光子晶体中强健的光传输。在本演讲的第二部分,我们讨论了通过调制硅的折射率来动态调谐所提出的拓扑绝缘体的可能性。通过将聚焦紫外脉冲光照射到硅光子晶体板上,促进了调制。紫外光照射引起电子空穴对的形成和自由载流子的激发,导致折射率降低,估计调制约为0.1。由于指数的变化,带隙和边缘状态的光谱位置发生了变化,从而实现了它们的动态控制。所提出的概念在通信领域具有快速全光交换和光传播控制的应用前景。
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