I. Ionica, D. Damianos, A. Kaminski-Cachopo, A. Bouchard, X. Mescot, M. Gri, G. Grosa, S. Cristoloveanu, G. Vitrant, D. Blanc-Pélissier, M. Lei, J. Chanzala
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引用次数: 1
Abstract
This paper reviews the application of second harmonic generation (SHG) to characterize dielectric-semiconductor interfaces used in microelectronics and photovoltaics. Based on non-linear optics, the method is non-destructive, so particularly advantageous for thin films. The theoretical background shows the possibility to access the electric field at interfaces and consequently to have a non-destructive measurement for interface state densities or fixed charges in oxides. Two more detailed examples of application of SHG characterization will be shown: field-effect passivation of silicon using thin film deposited alumina and interface analysis of silicon-on-insulator substrates.
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