Soft Defect Localization (SDL) applied on analog and mixed-mode ICs failure analysis

Jinglong Li, Chunlei Wu
{"title":"Soft Defect Localization (SDL) applied on analog and mixed-mode ICs failure analysis","authors":"Jinglong Li, Chunlei Wu","doi":"10.1109/IRPS.2012.6241907","DOIUrl":null,"url":null,"abstract":"Soft Defect Localization (SDL) has been applied on digital ICs failure analysis. But for analog and mixed-mode ICs, it is not so common. The analog failure types and characters are various, such as pulse width, amplitude, delay time, and so on. It is difficult to detect them directly by SDL system. In this paper, two FA cases are introduced to explain how to perform SDL on analog failures.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

Soft Defect Localization (SDL) has been applied on digital ICs failure analysis. But for analog and mixed-mode ICs, it is not so common. The analog failure types and characters are various, such as pulse width, amplitude, delay time, and so on. It is difficult to detect them directly by SDL system. In this paper, two FA cases are introduced to explain how to perform SDL on analog failures.
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软缺陷定位(SDL)在模拟和混合模式集成电路失效分析中的应用
软缺陷定位(SDL)已应用于数字集成电路的失效分析。但对于模拟和混合模式集成电路来说,这种情况并不常见。模拟故障的类型和特征是多种多样的,如脉冲宽度、幅度、延迟时间等。用SDL系统直接检测是比较困难的。本文介绍了两个FA案例来解释如何对模拟故障执行SDL。
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