A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

Zhiwei Xu, Q. Gu, Mau-Chung Frank Chang
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引用次数: 26

Abstract

We present a 101–117GHz power amplifier (PA) using two way current power combiner in 65nm bulk CMOS. It delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. To ensure the stability and improve efficiency, the PA first two stages adopt cascode structure and the last stage utilizes common source structure. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.
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一种w波段电流组合功率放大器,Psat为14.8dBm,最大PAE为9.4%
我们提出了一种采用双向电流合成器的101-117GHz功率放大器(PA)。它提供高达14.8dBm的饱和输出功率,功率增益超过14dB,功率附加效率(PAE)优于9.4%,也优于11.6dBm的输出P1dB。PA采用三级变压器耦合差分结构,集成输入和输出平衡。为了保证稳定性和提高效率,PA前两级采用级联码结构,最后一级采用共源结构。电流功率合并器用于将来自两个独立pa的功率组合在一起。整个PA芯的芯片面积为0.106 mm2,功耗约200mW。
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