R. Sorge, A. Fischer, K. Ehwald, R. Barth, P. Ostrovsky, R. Pliquett, K. Schulz, D. Bolze, P. Schley, D. Schmidt, H. Wulf, H. Grutzediek, J. Scheerer, P. Hartmetz
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引用次数: 3
Abstract
We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.
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