A 10Gb/s burst-mode transimpedance amplifier in 0.13μm CMOS

Abstract

This paper presents a 10 Gb/s burst-mode transimpedance amplifier (BMTIA), which has been fabricated in a 0.13 mum CMOS process. For the burst-mode receivers in passive optical networks (PONs), the preamplifier has to receive the burst-mode data packages with different amplitudes and provides a short settling time which is required for high data transmission efficiency. In this paper, a 10 Gb/s BMTIA is presented to achieve a wide dynamic range of 42.5 dB and fast settling time within Ins. It dissipates 7.2 mW excluding output buffer from a single 1.2 V supply voltage.