Organic Light Emitting Diode (OLED) Using Different Hole Transport and Injecting Layers

M. K. Othman, M. M. Salleh, A. Mat
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引用次数: 4

Abstract

This paper reports the various structures and performances improvements using different hole transporting layer in OLED based on DPVBi as emitter. Here the indium tin oxide (ITO) used as an anode, copper pthalocyanine (CuPc) as the hole injecting layer, PEDOT:PSS and poly-9- vinylcarbozole (PVK) as hole transporting layer, 4,4'-bis(2,2'diphenilvinyl)-1,1' -biphenyl (DPVBi) as the blue emitting layer and aluminum (Al) as the cathode. The CuPc and DPVBi were prepared by thermal evaporation while the PEDOT:PSS and PVK films were prepared using spin coating technique. The effect of inserting additional layer of CuPc, PVK and PEDOT:PSS between anode and the emitting layers was analyzed through the current-voltage (IV) curves and the electroluminescence spectra. The additional layer structure was found to increase the maximum luminance compared to that one of single layer device. The used of PVK as hole transporting layer has improved the diode properties of the device and able to prevent the device from short circuits. The optimized DPVBi layer thickness was observed at 56 nm and the insertion of 10 nm CuPc hole injecting layer show the device reduce it turn on voltage from 7.0 V to 6.5 V.
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采用不同空穴传输和注入层的有机发光二极管(OLED
本文报道了基于DPVBi作为发射极的OLED中不同空穴传输层的各种结构和性能改进。本文以氧化铟锡(ITO)为阳极,酞菁铜(CuPc)为空穴注入层,PEDOT:PSS和聚9-乙烯基carbozole (PVK)为空穴传输层,4,4'-双(2,2'二苯基乙烯基)-1,1' -联苯(DPVBi)为蓝色发射层,铝(Al)为阴极。采用热蒸发法制备CuPc和DPVBi薄膜,采用自旋镀膜法制备PEDOT:PSS和PVK薄膜。通过电流-电压曲线和电致发光光谱分析了在阳极和发射层之间插入CuPc、PVK和PEDOT:PSS的效果。与单层器件相比,附加层结构可以提高器件的最大亮度。采用PVK作为空穴传输层,提高了器件的二极管性能,并能防止器件发生短路。在56 nm处观察到优化后的DPVBi层厚度,在10 nm处插入CuPc孔注入层,器件的导通电压从7.0 V降低到6.5 V。
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