Wafer-fused thin film cooler semiconductor laser structures

C. Labounty, A. Karim, X. Fan, G. Zeng, P. Abraham, Y. Okuno, J. Bowers
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引用次数: 6

Abstract

We examine the cooling requirements and temperature stabilization needs of semiconductor lasers with emphasis on vertical cavity surface emitting laser (VCSEL) arrays. Semiconductor lasers in both in-plane and vertical cavity geometries are capable of generating large heat power densities of the order of kW/cm/sup 2/ over areas as small as 100 /spl mu/m/sup 2/. When cooling of the laser is needed, the cooler should be able to provide similar amounts of heat pumping. For these large amounts of heat pumping, a thin-film cooler structure is needed, especially if individual devices of an array must have precise temperature stabilization. Integration of the laser and thin film cooler by Au-Au wafer fusion is proposed. The fusion of the two interfaces is accomplished by mass transport in the deposited Au-films, which can be achieved under pressure at elevated temperatures. The quality of the fused interface is studied and preliminary experimental results are presented.
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晶圆熔合薄膜冷却半导体激光器结构
我们研究了半导体激光器的冷却要求和温度稳定需求,重点是垂直腔面发射激光器(VCSEL)阵列。平面内腔和垂直腔几何形状的半导体激光器能够在小至100 /spl mu/m/sup /的面积上产生kW/cm/sup /数量级的大热功率密度。当需要冷却激光时,冷却器应该能够提供类似数量的热泵。对于这些大量的热泵,需要薄膜冷却器结构,特别是如果阵列的单个设备必须具有精确的温度稳定。提出了利用Au-Au晶圆熔合技术将激光与薄膜冷却器集成在一起。两个界面的融合是通过沉积的au膜中的质量输运来完成的,这可以在压力和高温下实现。对熔接界面的质量进行了研究,并给出了初步的实验结果。
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