C. Schwan, K. Chew, Byounghak Lee, O. D. Restrepo, M. Kota, W. Chow, S. N. Ong, M. Cheng, X. S. Loo, R. Illgen, A. Huschka, M. Wiatr, Bhoopendra Singh, U. Kahler, J. Watts
{"title":"CMOS RF performance gain by gate resistance optimization","authors":"C. Schwan, K. Chew, Byounghak Lee, O. D. Restrepo, M. Kota, W. Chow, S. N. Ong, M. Cheng, X. S. Loo, R. Illgen, A. Huschka, M. Wiatr, Bhoopendra Singh, U. Kahler, J. Watts","doi":"10.1109/RFIC.2016.7508264","DOIUrl":null,"url":null,"abstract":"We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.
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