Effect of thickness variation CdO/PSi thin films on detection of radiation

S. A. Abdulridha, I. Ali, A. Shihab
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引用次数: 1

Abstract

CdO films were deposited on substrates from glass, Silicon and Porous silicon by thermal chemical spray pyrolysis technique with different thicknesses (130 and 438.46) nm. Measurements of X-ray diffraction of CdO thin film proved that the structure of the Polycrystalline is cubic lattice, and its crystallite size is located within nano scale range where the perfect orientation is (200). The results show that the surface’s roughness and the root mean square increased with increasing the thickness of prepared films. The UV-Visible measurements show that the CdO films with different thicknesses possess an allowed direct transition with band gap (4) eV. AFM measurement revealed that the silicon porosity located in nano range. Cadmium oxide films have been used in many applications especially in the photo sensors, the results showed high response for sensitivity in (277) nm within ultraviolet region, So that, the sensitivity reached to (1156) % when the films have the thickness (130) nm by using the porous silicon substrate.CdO films were deposited on substrates from glass, Silicon and Porous silicon by thermal chemical spray pyrolysis technique with different thicknesses (130 and 438.46) nm. Measurements of X-ray diffraction of CdO thin film proved that the structure of the Polycrystalline is cubic lattice, and its crystallite size is located within nano scale range where the perfect orientation is (200). The results show that the surface’s roughness and the root mean square increased with increasing the thickness of prepared films. The UV-Visible measurements show that the CdO films with different thicknesses possess an allowed direct transition with band gap (4) eV. AFM measurement revealed that the silicon porosity located in nano range. Cadmium oxide films have been used in many applications especially in the photo sensors, the results showed high response for sensitivity in (277) nm within ultraviolet region, So that, the sensitivity reached to (1156) % when the films have the thickness (130) nm by using the porous sil...
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厚度变化对CdO/PSi薄膜辐射检测的影响
采用热化学喷雾热解技术在玻璃、硅和多孔硅基底上制备了厚度分别为130 nm和438.46 nm的CdO薄膜。通过对CdO薄膜的x射线衍射测量,证实了该多晶的结构为立方晶格结构,其晶体尺寸位于纳米尺度范围内,完美取向为(200)。结果表明,表面粗糙度和均方根随薄膜厚度的增加而增大。紫外-可见测量结果表明,不同厚度的CdO薄膜具有允许的带隙(4)eV直接跃迁。原子力显微镜(AFM)测量表明,硅的孔隙率位于纳米范围内。氧化镉薄膜在光传感器中有着广泛的应用,在(277)nm紫外区具有很高的灵敏度响应,当薄膜厚度为(130)nm时,在多孔硅衬底上的灵敏度可达(1156)%。采用热化学喷雾热解技术在玻璃、硅和多孔硅基底上制备了厚度分别为130 nm和438.46 nm的CdO薄膜。通过对CdO薄膜的x射线衍射测量,证实了该多晶的结构为立方晶格结构,其晶体尺寸位于纳米尺度范围内,完美取向为(200)。结果表明,表面粗糙度和均方根随薄膜厚度的增加而增大。紫外-可见测量结果表明,不同厚度的CdO薄膜具有允许的带隙(4)eV直接跃迁。原子力显微镜(AFM)测量表明,硅的孔隙率位于纳米范围内。氧化镉薄膜在光传感器中有着广泛的应用,在(277)nm的紫外区具有很高的灵敏度响应,当膜的厚度为(130)nm时,其灵敏度可达(1156)%。
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